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13 March 2024 High power AlGaInP laser diodes at 626 nm
Felix Mauerhoff, Oktay Senel, Hans Wenzel, Andre Maassdorf, Jos Boschker, Johannes Glaab, Katrin Paschke, Günther Tränkle
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Proceedings Volume PC12905, Novel In-Plane Semiconductor Lasers XXIII; PC1290503 (2024) https://doi.org/10.1117/12.3002216
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We successfully designed and fabricated semiconductor lasers emitting at 626 nm at room-temperature to improve research and scaling of 9Be+ ion qubits. The design is based on the calculation of the energy band structure by k·p theory for strained semiconductors, the vertically guided mode, and the modal gain in dependence of carrier density as well as threshold sheet densities and wavelengths. Promising designs are grown on three-inch wafers by metal-organic vapor-phase epitaxy for experimental investigations. Broad area lasers are used for evaluation of the laser performance.
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Felix Mauerhoff, Oktay Senel, Hans Wenzel, Andre Maassdorf, Jos Boschker, Johannes Glaab, Katrin Paschke, and Günther Tränkle "High power AlGaInP laser diodes at 626 nm", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC1290503 (13 March 2024); https://doi.org/10.1117/12.3002216
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KEYWORDS
Semiconductor lasers
Aluminium gallium indium phosphide
High power lasers
Design and modelling
Nonlinear frequency conversion
Quantum light
Quantum physics
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