Graphene preparation on insulators: oxide, semiconductor, and sheet of paper

Satoru Kaneko; Takashi Tokumasu; Daishi Shiojiri; Manabu Yasui; Masahito Kurouchi; Masahiko Mitsuhashi; Chihiro Kato; Satomi Tanaka; Shigeo Yasuhara; Musa Can; Ruei-Sung Yu; Sumanta Shaoo; Kripasindhu Sardar; Masahiro Yoshimura; Akifumi Matsuda; Mamoru Yoshimoto

doi:10.1117/12.3000129

11 April 2024 Graphene preparation on insulators: oxide, semiconductor, and sheet of paper

Satoru Kaneko, Takashi Tokumasu, Daishi Shiojiri, Manabu Yasui, Masahito Kurouchi, Masahiko Mitsuhashi, Chihiro Kato, Satomi Tanaka, Shigeo Yasuhara, Musa Can, Ruei-Sung Yu, Sumanta Shaoo, Kripasindhu Sardar, Masahiro Yoshimura, Akifumi Matsuda, Mamoru Yoshimoto

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Proceedings Volume PC12939, High-Power Laser Ablation VIII; PC129390I (2024) https://doi.org/10.1117/12.3000129
Event: SPIE High-Power Laser Ablation, 2024, Santa Fe, New Mexico, United States

Abstract

After the discovery of graphene prepared by peeling graphite off using scotch tape, many methods are proposed, such as thermal decomposition of silicon carbide (SiC), and chemical vapor deposition (CVD) method. The CVD method seems like to be most popular among those methods. However, the CVD requires metal catalyst (Cu, Ni), and films deposited on such metals are required to transfer onto insulating substrates for device applications. Another method we have previously reported employs pencils and paper. Paper sheet drown using a lead pencil was irradiated by both femtosecond laser and laser cutter (consumer product, a few hundred dollars), and graphitic materials remain on the paper sheet [1]. In this presentation, another method using pulsed laser deposition (PLD) in carbon dioxide[2] will be proposed, and we estimated an adsorption energy between clusters and substrate surface for choice of substrates. A molecular dynamics was used to estimate the adsorption energy[3]. [1] Kaneko et. al. Jpn. J. Appl. Phys. 55 (2016) 01AE24. [2] Kaneko et. al. ACS Omega 2 (2017) 1523. [3] Kaneko et. al. Sci. Rep. 12(2022)15809.

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Satoru Kaneko, Takashi Tokumasu, Daishi Shiojiri, Manabu Yasui, Masahito Kurouchi, Masahiko Mitsuhashi, Chihiro Kato, Satomi Tanaka, Shigeo Yasuhara, Musa Can, Ruei-Sung Yu, Sumanta Shaoo, Kripasindhu Sardar, Masahiro Yoshimura, Akifumi Matsuda, and Mamoru Yoshimoto "Graphene preparation on insulators: oxide, semiconductor, and sheet of paper", Proc. SPIE PC12939, High-Power Laser Ablation VIII, PC129390I (11 April 2024); https://doi.org/10.1117/12.3000129

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KEYWORDS

Oxides

Graphene

Silicon

Chemical vapor deposition

Dielectrics

Semiconductors

Carbon dioxide

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