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10 April 2024 Computational lithography and patterning evaluation to support EUV high-NA stitching
Cyrus E. Tabery, Jiuning Hu, Rongkuo Zhao, Christoph Hennerkes, Stephen Hsu, Yunbo Liu, Natalia Davydova, Victor Blanco, Vincent Wiaux
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Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530M (2024) https://doi.org/10.1117/12.3012722
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
Several stitching approaches are considered to secure patterning performance across the stitch boundary and at ASML Brion we are developing solutions to support patterning at resolution across the stitch. Sensitivity analysis is performed to quantify contrast, CD control, and pattern placement performance across the stitch boundary for holes and line/space layers and experimental CD control and experimental process capability and reticle patterning performance is presented and compared to the latest simulation and modelling capability using calibrated 0.33NA models and exposures. Especially important is to quantify cross talk of model accuracy errors, reticle CD errors, and placement errors in the stitching region where advanced models, scanner control and process design strategies are required.
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Cyrus E. Tabery, Jiuning Hu, Rongkuo Zhao, Christoph Hennerkes, Stephen Hsu, Yunbo Liu, Natalia Davydova, Victor Blanco, and Vincent Wiaux "Computational lithography and patterning evaluation to support EUV high-NA stitching", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530M (10 April 2024); https://doi.org/10.1117/12.3012722
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KEYWORDS
Optical lithography
Reticles
Extreme ultraviolet
Computational lithography
Critical dimension metrology
Process control
Design and modelling
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