Surface hardening of chemical amplified resist (CAR) type extreme ultraviolet (EUV) photoresist by CS2 plasma for highly selective and low damage patterning

Hee Ju Kim; Won Jun Chang; Geun Young Yeom

doi:10.1117/12.3009948

10 April 2024 Surface hardening of chemical amplified resist (CAR) type extreme ultraviolet (EUV) photoresist by CS₂ plasma for highly selective and low damage patterning

Hee Ju Kim, Won Jun Chang, Geun Young Yeom

Author Affiliations +

Proceedings Volume PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; (2024) https://doi.org/10.1117/12.3009948
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Extreme ultraviolet (EUV) lithography offers finer patterning with a 13.5nm wavelength light source, surpassing ArF immersion lithography. However, EUV photoresist (PR) faces challenges such as low etch resistance and patterning issues due to high line edge roughness (LER). In this study, we investigated the effects of CS2 plasma treatment and subsequent annealing on the properties of EUV PR during CF4/Ar plasma etching. CS2 plasma treatment and CS2 plasma treatment followed by annealing improved the etch resistance of PR by reducing ΔLER, ΔCritical dimension, and ΔThickness compared to untreated or annealed PR. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy revealed the formation of C-S and O=S bonds on CS2 plasma-treated EUV PR, contributing to these improvements.

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Hee Ju Kim, Won Jun Chang, and Geun Young Yeom "Surface hardening of chemical amplified resist (CAR) type extreme ultraviolet (EUV) photoresist by CS₂ plasma for highly selective and low damage patterning", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3009948

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