Presentation
11 June 2024 Electrical manipulation of telecom color centers in silicon
Madison Sutula, Aaron Day, Jonathan Dietz, Alex Ruan, Denis Sukachev, Mihir Bhaskar, Evelyn Hu
Author Affiliations +
Abstract
Silicon color centers have emerged as promising candidates for quantum information technologies, yet their interaction with electric fields is not well understood. We will discuss electrical manipulation of G-centers in silicon -- quantum emitters that photoluminesce in the telecom O-band. We fabricated lateral electrical diodes with an integrated ensemble of G centers in a commercial silicon on insulator wafer. Under application of a reverse-biased DC electric field, the ensemble of G-centers redshifts by approximately 1.4 GHz/V above a threshold “turn-on voltage.” The fluorescence intensity is modulated by increasing electric field, ultimately achieving 100% extinction. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. The emitter-field coupling is correlated to the photocurrent generated in the device. Our device architecture uniquely enables simultaneous optical and electrical manipulation of quantum emitters, and it is readily extensible to other quantum emitters.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Madison Sutula, Aaron Day, Jonathan Dietz, Alex Ruan, Denis Sukachev, Mihir Bhaskar, and Evelyn Hu "Electrical manipulation of telecom color centers in silicon", Proc. SPIE PC12993, Quantum Technologies 2024, PC1299303 (11 June 2024); https://doi.org/10.1117/12.3015087
Advertisement
Advertisement
KEYWORDS
Silicon

Color centers

Electric fields

Quantum devices

Quantum emitters

Quantum technologies

Semiconducting wafers

Back to Top