Silicon color centers have emerged as promising candidates for quantum information technologies, yet their interaction with electric fields is not well understood. We will discuss electrical manipulation of G-centers in silicon -- quantum emitters that photoluminesce in the telecom O-band. We fabricated lateral electrical diodes with an integrated ensemble of G centers in a commercial silicon on insulator wafer. Under application of a reverse-biased DC electric field, the ensemble of G-centers redshifts by approximately 1.4 GHz/V above a threshold “turn-on voltage.” The fluorescence intensity is modulated by increasing electric field, ultimately achieving 100% extinction. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. The emitter-field coupling is correlated to the photocurrent generated in the device. Our device architecture uniquely enables simultaneous optical and electrical manipulation of quantum emitters, and it is readily extensible to other quantum emitters.
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