Spin-transfer torque MRAM technology for high speed, low bit error rate, and high reliability industrial applications

Frederick Mancoff; Sumio Ikegawa; Syed M. Alam; Monika Arora; Mark DeHerrera; Raj Kumar; Han Kyu Lee; Subir Mukherjee; Goei Shimon; Jijun Sun; Iftekhar Rahman; Frederick Neumeyer; Hsuan Yi Chou; Chin Hoe Tan; Kerry Nagel; Amit Shah; Sanjeev Aggarwal

doi:10.1117/12.3027166

4 October 2024 Spin-transfer torque MRAM technology for high speed, low bit error rate, and high reliability industrial applications

Frederick Mancoff, Sumio Ikegawa, Syed M. Alam, Monika Arora, Mark DeHerrera, Raj Kumar, Han Kyu Lee, Subir Mukherjee, Goei Shimon, Jijun Sun, Iftekhar Rahman, Frederick Neumeyer, Hsuan Yi Chou, Chin Hoe Tan, Kerry Nagel, Amit Shah, Sanjeev Aggarwal

Author Affiliations +

Proceedings Volume PC13119, Spintronics XVII; PC131191E (2024) https://doi.org/10.1117/12.3027166
Event: Nanoscience + Engineering, 2024, San Diego, California, United States

Abstract

We will describe the latest spin-transfer torque magnetoresistive random access memory (STT-MRAM) product family from Everspin Technologies, which is aimed at industrial applications requiring low-latency, high-speed, low bit error rate, and high reliability. The STT-MRAM is built on GlobalFoundries’ 28nm CMOS, uses an expanded SPI (xSPI) interface, and is offered in densities from 4Mb to 128Mb. We describe how continuous process improvements to the magnetic tunnel junctions enabled the required performance in switching speed and bit error rate. We further demonstrate robust operation of the product dies over a full temperature range from -40°C to 105°C as well as their reliability performance in terms of the data retention against high temperature disturbs, the write cycling endurance, and the immunity to in-plane and perpendicular applied magnetic fields.

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Frederick Mancoff, Sumio Ikegawa, Syed M. Alam, Monika Arora, Mark DeHerrera, Raj Kumar, Han Kyu Lee, Subir Mukherjee, Goei Shimon, Jijun Sun, Iftekhar Rahman, Frederick Neumeyer, Hsuan Yi Chou, Chin Hoe Tan, Kerry Nagel, Amit Shah, and Sanjeev Aggarwal "Spin-transfer torque MRAM technology for high speed, low bit error rate, and high reliability industrial applications", Proc. SPIE PC13119, Spintronics XVII, PC131191E (4 October 2024); https://doi.org/10.1117/12.3027166

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KEYWORDS

Reliability

Industrial applications

Switching

Magnetic tunnel junctions

Magnetism

Aerospace engineering

Data centers

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