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2 July 2012 Publisher's Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy
Azzouz Sellai, Piotr Kruszewski, Abdelmadjid Mesli, Anthony R. Peaker, Mohamed Missous
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Abstract
Abstract unavailable.

This article was originally published in Vol. 6 of the Journal of Nanophotonics on 24 February 2012 in the wrong section of the table of contents and with an incorrect citation identifier (CID) of 013502. The paper was removed and republished online with the correct CID of 063502 on 8 March 2012. This change was made in order for the paper to appear under the correct section heading, “Research Papers.”

For more information on the use of CIDs in JNP, see http://spiedigitallibrary.org/jnp/citation_format.

© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Azzouz Sellai, Piotr Kruszewski, Abdelmadjid Mesli, Anthony R. Peaker, and Mohamed Missous "Publisher's Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy," Journal of Nanophotonics 6(1), 060103 (2 July 2012). https://doi.org/10.1117/1.JNP.6.060103
Published: 2 July 2012
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KEYWORDS
Gallium arsenide

Indium arsenide

Quantum dots

Spectroscopy

Physics

Electronics engineering

Microelectronics

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