We introduced several approaches of terahertz wavefront phase retrieval from intensity measured in a volumetric grid. Our developments include several experimental solutions for the registration of multiple intensity distributions spaced along the optical axis for two types of terahertz sources, namely Gunn diode with frequency multiplication chain and quantum cascade laser. We implemented several measurement modes: (i) sequential raster scanning by single Schottky diode with two lock-in amplifiers, complimentary tuned to different sensitivities for high dynamic range recording; (ii) step by step registration on matrix photodetectors, with averaging over several images for every measurement plane; (iii) continuous measurement during the displacement of the motorized translation stage. The high dynamic range data acquisition allowed us to successfully implement single-beam terahertz surface profilometry in the reflection, while the on-the-go recording ensures the shortest measurement times. In addition, we experimentally appraised two matrix detectors (INO and I2S) and applied several phase retrieval algorithms which proved their effectiveness in various experimental conditions, namely for the intensity registration in various diffraction zones and axial measurement plane allocations.
Lasers, modulators and photodetectors are key components to configure transmitter and transceiver in optical communication links or optical information processing systems. There are a few optical transmission windows with low attenuation (< 0.2 dB/km) located around 1550nm, 1060nm and 850nm. The 1550nm and 850nm bands are wider explored than 1060nm window owing to more available components and optics in these regimes that used nowadays in telecom/datacom network facilities.
This work presents design, fabrication and characterizations of III-V semiconductor quantum structures based optoelectronic components produced at RISE Acreo’s ISO9001 certified clean-room laboratory. The 850nm and 1060nm devices have been designed and fabricated using the quantum structures grown on GaAs substrate, while the 1550nm components are based on the epi structures lattice matched to InP substrate. Desired operating wavelength can be turned by bandgap engineering, and the format of the devices can be arranged according customized specifications. As a demonstration, a 2x64 spatial light modulator (SLM) array with gradually increase operating wavelengths of each pixel at about 850nm will be detailed, which was used to achieve planar-integrated free-space optics for signal splitting, interconnection and processing. For 1550nm window, two components will be presented, one is a small aperture electroabsorption modulator (EAM) with diameter of 150µm that reached data rate at about 1 Gbps in a FSO link, another is an avalanche photodiode (APD) linear array. In addition, the lasers operating at about 1060nm utilizing quantum wells or quantum dots will be addressed.
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