Ge clusters show luminescence at room temperature. The clusters are grown on Si substrate at room temperature (Ge-RT) and also at liquid nitrogen temperature (Ge-LNT) by cluster evaporation technique. Raman measurement demonstrates the increase in strain with annealing in diffused disordered Si at the interface between Ge-LNT clusters and Si substrate. This manifests in strain-relaxation in the clusters as observed by Photoluminescence (PL) measurements. The decrease in PL intensity for Ge-RT with annealing has been attributed to reduction in surface oxide species, which is supported by Raman spectroscopic measurements. The objective of the paper is to understand the effect of thermal annealing on both interfacial strain and interdiffusion of elemental Si at the interface, together with luminescence characteristics of the clusters.
The numerical investigation uses the intensity-dependent gain coefficient in a coupled-wave formulation which explains nonlinear intensity-dependent behavior associated with the growth of beam-fanning observed in a photorefractive BaTiO3 crystal. The study shows the effect of crystal orientation and biasing illumination on such a nonlinear behavior.
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