Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.
We present first results from experimental data showing the capabilities of an Associated Particle Imaging system to measure carbon in soil and other elements. Specifically, we present results from a pre-mixed soil sample containing pure sand (SiO2) and 4 % carbon by weight. Because the main isotopes of all those three elements emit characteristic high-energy gamma rays following inelastic neutron scattering, it is possible to measure their distribution with our instrument. A 3D resolution of several centimeters in all dimensions has been demonstrated.
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31Pq+ ions. When 31Pq+ ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.
A novel design for an electron beam focusing column has been developed at LBNL. The design is based on a low-energy spread multicusp plasma source which is used as a cathode for electron beam production. The focusing column is 10 mm in length. The electron beam is focused by means of electrostatic fields. The column is designed for a maximum voltage of 50 kV. Simulations of the electron trajectories have been performed by using the 2D simulation code IGUN and EGUN. The electron temperature has also been incorporated into the simulations. The electron beam simulations, column design and fabrication will be discussed in this presentation.
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