In this paper we present the key enhancements incorporated in the new NXT platform and also share future development steps enabled by the platform. These innovations build on driving the system productivity while in parallel improving the overlay performance and at the same time minimizing the scanner grid differences between NXT-based ArF/ArFi/KrF and NXE-based EUV scanners. Both hardware as well as software improvements play an important role in improving cross-matching overlay performance. On the hardware side, changes have been introduced to key modules such as the projection lens and the reticle stage to better match to EUV layers. Furthermore, the new NXT platform introduces a more powerful wafer stage to support better overlay accuracy as well as improved productivity. Complementary software-based corrections are developed to further correct for grid imperfections. For instance to reduce the impact of DUV pellicle distortions, onscanner real-time corrections have been added to the scanner metrology control architecture. ‘Maximizing the number of good-wafers-per-day’ has been the guiding principle for the development of the new NXT platform. Apart from driving the scanner productivity along the traditional wafer-per-hour metric, advancements have been implemented to improve the operational efficiency of the scanner on production use-cases while also minimizing the time spent on required system maintenance. This all to maximize the effective scanner output under HVM conditions. The new NXT platform is currently being rolled out for the most advanced immersion and ArF scanners – the NXT:2050i and the NXT:1470. Going forward, it will support further productivity steps and improved overlay accuracy and EUV matching developments. The platform is also prepared to support KrF scanners in the near future, where especially the productivity will be stretched for this wavelength. Longer term this platform will serve as the stepping stone towards significantly higher wafers-per-day productivity levels and sub-nm overlay accuracy.
The next generation technology and emerging memory devices require gradually tighter lithographic focus control on imaging critical layers. Especially in case of BEOL process, big PDO (Process Dependent Offset) from large intra-field topography steps affects the process margin directly. There are couple of scanner options to reduce PDO, such as AGILE which provides several benefits. However, for certain use cases the AGILE sensor may not be the optimal solution.
In this paper, we introduce the concept and development background of iFPC (intra-field Finger Print Correction). iFPC is a scanner option that removes the generic 3D fingerprint seen in the leveling data so that both process dependency and actual wafer topography are not followed during wafer exposure.
In addition, we compare the degree of process margin improvement when applying iFPC compared to that of AGILE on a critical layer. The achieved results demonstrate that by applying iFPC it is possible to gain an additional 15~20nm DoF. In other words, on this use case our feasibility suggests that by removing the generic 3D fingerprint seen in the leveling data, it is possible to achieve a better focus performance than when trying to follow the topography during scanning.
In conclusion, we found another good way to improve the process margin through this comparative experiment. Therefore, our next step will be to setup the methodology to select the use cases where iFPC is the optimal solution.
Since its breakthrough, the liquid crystal technology has continued to gain momentum and the LCD is
today the dominating display type used in desktop monitors, television sets, mobile phones as well as other
mobile devices.
To improve production efficiency and enable larger screen sizes, the LCD industry has step by step
increased the size of the mother glass used in the LCD manufacturing process. Initially the mother glass
was only around 0.1 m2 large, but with each generation the size has increased and with generation 10 the
area reaches close to 10 m2.
The increase in mother glass size has in turn led to an increase in the size of the photomasks used - currently the largest masks are around 1.6 × 1.8 meters. A key mask performance criterion is the absence of
"mura" - small systematic errors captured only by the very sensitive human eye. To eliminate such
systematic errors, special techniques have been developed by Micronic Mydata. Some mura suppressing
techniques are described in this paper.
Today, the race towards larger glass sizes has come to a halt and a new race - towards higher resolution
and better image quality - is ongoing. The display mask is therefore going through a change that resembles
what the semiconductor mask went through some time ago: OPC features are introduced, CD requirements
are increasing sharply and multi tone masks (MTMs) are widely used. Supporting this development,
Micronic Mydata has introduced a number of compensation methods in the writer, such as Z-correction,
CD map and distortion control. In addition, Micronic Mydata MMS15000, the world's most precise large
area metrology tool, has played an important role in improving mask placement quality and is briefly
described in this paper.
Furthermore, proposed specifications and system architecture concept for a new generation mask writers - able to fulfill future image quality requirements - is presented in this paper. This new system would use an
AOD/AOM writing engine and be capable of resolving 0.6 micron features.
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