Dr. Bang-Ching Ho Profile

Dr. Bang-Ching Ho

R&D Manager at Nissan Chemical Taiwan Co Ltd

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Author

Publications (22)

Proceedings Article | 1 April 2013 Paper

EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL

Wataru Shibayama, Shuhei Shigaki, Rikimaru Sakamoto, Ryuji Onishi, Hiroaki Yaguchi, Bang Ching Ho

Proceedings Volume 8679, 867914 (2013) https://doi.org/10.1117/12.2011441

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Photomasks, Roentgenium, Silicon, Chromophores, Line width roughness, Photoresist processing

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Proceedings Article | 29 March 2013 Paper

Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process

Rikimaru Sakamoto, Yasushi Sakaida, Bang-Ching Ho

Proceedings Volume 8682, 868205 (2013) https://doi.org/10.1117/12.2011511

KEYWORDS: Etching, Photoresist processing, Liquids, Materials processing, Lithography, Image processing, Photomasks, Extreme ultraviolet lithography, Immersion lithography, Polymers

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Because the pattern pitch is getting smaller and smaller, the pattern collapse issue in the lithography process have been getting the sever problem. Especially, pattern collapse is one of the main reasons for minimizing of process margin at fine pitch by EUV lithography. The possible major cause of pattern collapse is the surface tension of the rinsing liquid and the shrinkage of resist pattern’s surface in the process of drying the rinsing liquid. The influence of surface tension for very small pitch pattern is particularly severe. The one of the most effective solution for this problem is thinning of the resist film thickness, however this method is reaching to its limits in terms of substrate etching process anymore. The tri-layer resist process or hard mask processes have been used, but there is a limit to the thinning of resist film and there is no essential solution for this problem. On the other hand, the supercritical drying method has been known as an ultimate way to suppress the pattern collapse issue. The supercritical drying method is a dry process advanced to the vapor phase from the liquid phase via supercritical, and the supercritical drying method can dry the rinsing liquid without making the vapor-liquid coexistence state. However, this process is not applied to the mass production process because it requires the introduction of the special equipment. We newly developed the novel process and material which can prevent the pattern collapse issue perfectly without using any special equipment. The process is Dry Development Rinse Process (DDRP), and the material used in the process is Dry Development Rinse Material (DDRM). DDRM is containing the special polymer which can replace the exposed and developed part. And finally, the resist pattern will be developed by Dry etching process without any pattern collapse issue. In this paper, We will discuss the approach for preventing the pattern collapse issue in PTD and NTD process, and propose DDRP and DDRM as the solution.

Proceedings Article | 29 March 2013 Paper

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

Noriaki Fujitani, Rikimaru Sakamoto, Takafumi Endo, Ryuji Onishi, Tokio Nishita, Hiroaki Yaguchi, Bang-Ching Ho

Proceedings Volume 8682, 868209 (2013) https://doi.org/10.1117/12.2011489

KEYWORDS: Extreme ultraviolet lithography, Transmittance, Lithography, Contamination, Thin film coatings, Chemical species, Extreme ultraviolet, Optical lithography, Absorbance, Deep ultraviolet

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Proceedings Article | 28 March 2012 Paper

The novel spin-on hard mask and ultrathin UL material for EUVL

Rikimaru Sakamoto, Hiroaki Yaguchi, Syuhei Shigaki, Suguru Sassa, Noriaki Fujitani, Takafumi Endo, Ryuji Onishi, Bang Ching Ho

Proceedings Volume 8325, 832512 (2012) https://doi.org/10.1117/12.916328

KEYWORDS: Extreme ultraviolet lithography, Coating, Polymers, Roentgenium, Lithography, Extreme ultraviolet, Etching, Line width roughness, Photomasks, Silica

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Proceedings Article | 23 March 2012 Paper

The novel top-coat material for RLS trade-off reduction in EUVL

Ryuji Onishi, Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, Bang-ching Ho

Proceedings Volume 8322, 83222D (2012) https://doi.org/10.1117/12.916341

KEYWORDS: Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Absorption, Transmittance, Line width roughness, Optical properties, Deep ultraviolet, Contamination, Light

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Proceedings Article | 8 April 2011 Paper

Development of under layer material for EUV lithography

Rikimaru Sakamoto, Bang-Ching Ho, Noriaki Fujitani, Takafumi Endo, Ryuji Ohnishi

Proceedings Volume 7969, 79692F (2011) https://doi.org/10.1117/12.878734

KEYWORDS: Extreme ultraviolet lithography, Polymers, Lithography, Extreme ultraviolet, Line width roughness, Coating, Diffusion, Line edge roughness, Critical dimension metrology, Interfaces

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Proceedings Article | 26 March 2010 Paper

Carbon-rich spin on sidewall material for self-aligned double-patterning technology

Dennis Shu-Hao Hsu, Hiroaki Yaguchi, Rikimaru Sakamoto, Daisuke Maruyama, Yasushi Sakaida, Walter Wang, Chun-Yen Huang, Wen-Bin Wu, Bang-Ching Ho, Chiang-Lin Shih

Proceedings Volume 7639, 763908 (2010) https://doi.org/10.1117/12.846267

KEYWORDS: Ultraviolet radiation, Amplifiers, Double patterning technology, Thin film coatings, Etching, Chemical reactions, Photoresist processing, Diffusion, Polymers, Industrial chemicals

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Proceedings Article | 12 December 2009 Paper

Bottom-anti-reflective coatings (BARC) for LFLE double patterning process

Rikimaru Sakamoto, Takafumi Endo, Bang-Ching Ho, Shigeo Kimura, Tomohisa Ishida, Masakazu Kato, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Daisuke Maruyama

Proceedings Volume 7520, 75201Y (2009) https://doi.org/10.1117/12.837156

KEYWORDS: Lithography, Double patterning technology, Polymers, Photoresist processing, Chromophores, Scanning electron microscopy, Reflectivity, Thin film coatings, Critical dimension metrology, Immersion lithography

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Proceedings Article | 11 December 2009 Paper

Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process

Yasushi Sakaida, Hiroaki Yaguchi, Rikimaru Sakamoto, Bang-Ching Ho

Proceedings Volume 7520, 75201F (2009) https://doi.org/10.1117/12.837157

KEYWORDS: Etching, Coating, Double patterning technology, Silicon, Materials processing, Semiconducting wafers, Sensors, Glasses, Lithography, Optical lithography

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Proceedings Article | 4 December 2008 Paper

A cost effective spin on sidewall material alternative to the CVD sidewall process

Daisuke Maruyama, Bang-Ching Ho, Sangwoong Yoon, Rikimaru Sakamoto, Yasushi Sakaida, Keisuke Hashimoto, Noriaki Fujitani, Hiroaki Yaguchi, Koutastu Matsubara

Proceedings Volume 7140, 714037 (2008) https://doi.org/10.1117/12.804490

KEYWORDS: Silicon, Thin film coatings, Chemical vapor deposition, Ultraviolet radiation, Double patterning technology, Lithography, Semiconducting wafers, Resistance, Interfaces, 193nm lithography

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Proceedings Article | 26 March 2008 Paper

Advanced ultraviolet cross-link process and materials for global planarization

Satoshi Takei, Yusuke Horiguchi, Tomoya Ohashi, Bang-Ching Ho, Yasuyuki Nakajima, Yuichi Mano, Makoto Muramatsu, Mitsuaki Iwashita, Katsuhiro Tsuchiya, Akira Samura, Yoshiaki Yamada, Tadayuki Yamaguchi

Proceedings Volume 6923, 69232K (2008) https://doi.org/10.1117/12.771934

KEYWORDS: Ultraviolet radiation, Etching, Semiconducting wafers, Chemical mechanical planarization, Coating, Lithography, Dielectrics, Silicon, Double patterning technology, Materials processing

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Proceedings Article | 26 March 2007 Paper

Novel approach of UV cross- link process for advanced planarization technology in 32-45 nm lithography

Satoshi Takei, Yusuke Horiguchi, Tetsuya Shinjo, Bang-Ching Ho, Yuichi Mano, Yasuyuki Nakajima, Makoto Muramatsu, Mitsuaki Iwashita, Katsuhiro Tsuchiya

Proceedings Volume 6519, 651933 (2007) https://doi.org/10.1117/12.711362

KEYWORDS: Extreme ultraviolet, Ultraviolet radiation, Lithography, Etching, Semiconducting wafers, Silicon, Optical lithography, Photoresist processing, Dry etching, Photoresist materials

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SPIE Journal Paper | 1 October 2005

Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles

Shinn-Sheng Yu, Burn Lin, Anthony Yen, Chih-Ming Ke, Te-Chih Huang, Bang-Chein Ho, Chun-Kuang Chen, Tsai-Sheng Gau, Hung-Chang Hsieh, Yao-Ching Ku

JM3, Vol. 4, Issue 04, 043003, (October 2005) https://doi.org/10.1117/12.10.1117/1.2137967

KEYWORDS: Thin films, Wave propagation, Magnetism, Optical lithography, Critical dimension metrology, Interfaces, Scanners, Absorption, Lithography, Multilayers

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Proceedings Article | 4 May 2005 Paper

Double exposure for the contact layer of the 65-nm node

Dah-Chung Owe-Yang, S. S. Yu, Harrison Chen, C. Chang, Bang-Chein Ho, John Lin, Burn Lin

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599651

KEYWORDS: Image processing, Photomasks, Ultraviolet radiation, Optical lithography, Printing, Photoresist processing, Polymers, Semiconductors, Critical dimension metrology, Image resolution

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The critical dimension (CD) of contact holes for the 65-nm application specific integrated circuit (ASIC) is 100 nm according to the 2002 update of the International Technology Roadmap for Semiconductors. The common through-pitch depth of focus (DOF) of such contact holes is very small using the current ArF exposure tool. High-numerical-aperture (NA) ArF exposure tools are not expected to improve the common DOF that scales by the square of the numerical half aperture. High-transmission attenuated phase-shifting masks increase the DOF of isolated contact holes. Off-axis illumination such as annular or quadrupole illumination improves the DOF of dense contact holes. Nonetheless, both the isolated and the dense contact holes need to be printed within spec on logic circuit. To delineate 100-nm contact holes at several different pitches, we proposed the pack-and-unpack (PAU) process which employs double exposures. First, dummy holes are added to the surroundings of isolated contact holes facilitating the patterning of the resultant dense pattern with a resolution enhancement technique that favors dense contact holes. For example, dense holes are packed to 180-nm pitch and imaged with high-NA lens setting and quadrupole illumination. Then, the second image is used to open the desired holes or block the dummy contact holes. The purpose of this study was to develop new methods and new materials for the patterning of the second image. Three approaches were investigated. The first approach was forming an isolation layer to protect the first image; second, applying UV curing to harden the first image; third, using alcohol-based resists to pattern the second image. Among those three approaches of printing the second image, using resist in alcohols is the most convenient method. Even though the CD control of the second image is not so critical, resolution and process window of resists may need further improvement for 45-nm node and below. Using the second approach allows conventional ArF resists, which does not raise as many concerns as the alcohol-based resists. With the first approach, a lot more work is needed to prevent intermixing and reactions between the isolation layer and the resist for the second image. The results of this work point to the directions for material developments of the PAU process. Both the alcohol-based resists and UV curing are good approaches for PAU. Further characterizations such as DOF, exposure latitude (EL), and mask error factor (MEF) on them will be carried out in the near future.

Proceedings Article | 14 May 2004 Paper

How to print 100 nm contact hole with low NA 193 nm lithography

Shang-ho Lin, Jui-mei Teng, Jian-hong Chen, Chun-hua Chen, Bang-ching Ho

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535141

KEYWORDS: Photomasks, Lithography, Photoresist processing, Line edge roughness, Resolution enhancement technologies, Logic, Optical proximity correction, Thermal modeling, Semiconducting wafers, Manufacturing

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Proceedings Article | 14 May 2004 Paper

Application of photosensitive BARC and KrF resist on implant layers

D.C. Owe-Yang, Bang-ching Ho, Shinji Miyazaki, Tomohide Katayama, Kenji Susukida, Wenbing Kang, Yung-Cheng Chang

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534735

KEYWORDS: Critical dimension metrology, Photoresist processing, Lithography, Dry etching, Semiconducting wafers, Antireflective coatings, Bottom antireflective coatings, Reflection, Plasma etching, Chemically amplified resists

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The IC industry is moving toward 90nm node and below. The CD size of implant layers has shrunk to 220nm. To achieve better CD uniformity, dyed KrF resist and top anti-reflective coating (TARC) are commonly used in advanced photo process of implant layers. It’s well known that bottom anti-reflective coating (BARC) has better reflection control over TARC. However, dry etching process is required if typical organic BARC is applied to photo process of implant layers. It is undesirable for two reasons. The first reason is the substrate damage caused by plasma etching could affect the device performance. The second reason is higher cost due to additional processing steps. In order to overcome those two shortcomings, developable BARC (DBARC) is introduced. It is a new type of BARC, which is soluble to developer, TMAH solution, in the resist development step. There are some reports on the developer-soluble KrF BARC. Most of them are polyamic acid and their solubility to alkline could be adjusted by changing bake condition. However, its development is isotropic, which make it difficult to get a vertical profile. Therefore, we have developed a photosensitive developer-soluble BARC (DBARC) which is anisotropic after exposure and thus results in a nice vertical profile. The photosensitive DBARC utilizes the same concept as chemically amplified resist. It has acid-cleavable groups in the resin and PAGs in the formulation. The photosensitive DBARC turns soluble to TMAH developer after exposure and resist PEB. The solubility difference caused by exposure makes developing process anisotropic and thus improves profile control. In this article, we will report the evaluation results of various combinations of KrF resists and DBARC for implant layers. Since both the resist and DBARC are photosensitive, matching of the photo speeds of them is essential. The amount and type of PAG in both the resist and the DBARC play a very import role. Finally, the optimized combination showed acceptable lithography process window and good CD uniformity over topography.

Proceedings Article | 2 June 2003 Paper

Process improvements of applying 193-nm lithography to 90-nm logic implant layer

D.C. OweYang, Harrison Chen, R.M. Deng, Bang-Ching Ho

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483691

KEYWORDS: Lithography, Critical dimension metrology, Scanners, Semiconducting wafers, Logic, Overlay metrology, Arsenic, Optical proximity correction, Scanning electron microscopy, Ion implantation

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Controlling critical dimension (CD) uniformity and overlay accuracy are crucial to achieving quality lithography. The continuous reduction in minimum feature and unit cell sizes on semiconductor wafers has posed significant strain to lithography engineers. According to the 2001 ITRS roadmap, the half pitch of DRAM will be 100 nm and the overlay requirement will be 35 nm for the Poly layer in 2003. Up to date, the 193 nm lithography is mainly applied to those critical layers, such as Poly, Contact, Metal and Via in chip process flow. For the non-criticals, such as well and source-drain implant layers, we still use 248 nm or even 365 nm lithography. Such a situation poses potential challenges when we try to improve the overlay accuracy demanded by area reduction on unit cells since a mix-and-match between 193 nm and 248 nm has to be carried out. In the 90 nm logic process, the overlay requirement of implant layer to critical layers are tightened to 60 nm, which has been close to the current limit of tool matching capability between 193 nm and 248 nm. Stimulated by such an issue we start to implement 193 nm lithography into implant layers. In this paper, a full lithographic process characterization for 90 nm logic implant layers using 193 nm lithography is reported. The photo resist swing cure was first generated to determine the resist thickness. A top antireflective coating (ARC) was also applied to reduce the photo resist swing effect. After the target thickness of photo resist is being defined, three different thickness of resist was coated including targeted, thinner and thicker than targeted. Resist coated wafers were through bombardment of implantation species, then were sent to SIMS analysis. Based on the SIMS results, the target thickness is verified to be safe for the high voltage implantation required by process flow. The DOF data were collected for six kinds of patterns. The proximity effect data of 193 nm is only half of that resulted in 248 nm lithography. So, the optical proximity correction (OPC) may not be needed if 193 nm lithography is used. Besides, the CD variation is also improved when compared to the 248 nm lithography, especially when resist patterns are printed on topographic wafers. As the chip continues its shrinkage, the 193 nm lithography will be a must for implant layers at some point.

Proceedings Article | 24 July 2002 Paper

Optimization of organic bottom antireflective coatings' compatibility with ArF resists

Zhong Xiang, Jianhui Shan, Eleazar Gonzalez, Hengpeng Wu, Shuji Ding, Mark Neisser, Bang-Chein Ho, Harrison Chen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474186

KEYWORDS: Etching, Reflectivity, Fourier transforms, Polymers, Bottom antireflective coatings, 193nm lithography, Lithography, Coating, Silicon carbide, Neodymium

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Proceedings Article | 11 June 1999 Paper

ArF photoresist system: using cycloolefin-alt-maleic anhydride pericyclic acrylate terpolymers

Sheng-Yueh Chang, Kung-Lung Cheng, Bang-Chein Ho, Jui-Fa Chang, Jian-Hong Chen, Ting-Chung Liu, Tzu-Yu Lin

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350193

KEYWORDS: Photoresist materials, Etching, Semiconducting wafers, Polymers, Lithography, Photoresist developing, Scanning electron microscopy, Resistance, Imaging systems, Deep ultraviolet

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Proceedings Article | 29 June 1998 Paper

Techniques for the analysis of Cl- ion in TMAH

Bang-Chein Ho, Mong-Ling Chang, Yu-Ping Lin

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312436

KEYWORDS: Ions, Chromatography, Chlorine, Standards development, Ion exchange, Photoresist developing, Calibration, Analytical research, Chemical analysis, Integrated circuits

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Proceedings Article | 29 June 1998 Paper

Novel ArF photoresist system using acrylic polymer

Bang-Chein Ho, Jui-Fa Chang, Ting-Chung Liu, Jian-Hong Chen

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312435

KEYWORDS: Polymers, Photoresist materials, Deep ultraviolet, Semiconducting wafers, Microelectronics, Photoresist processing, Absorption, Holmium, Roads, 193nm lithography

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Proceedings Article | 25 November 1993 Paper

Preparation of GI plastic rods by interfacial-gel copolymerization

S. Young, Yih-Her Chang, Bang-Chein Ho, J. Chen, H. Hsu, W. Hu, T. Tseng, M. Lee

Proceedings Volume 2000, (1993) https://doi.org/10.1117/12.163669

KEYWORDS: Refractive index, Polymerization, Optical fibers, Phase only filters, Bismuth, Transparency, Electroluminescence, Gradient-index optics, Lenses, Local area networks

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Showing 5 of 22 publications

Conference Committee Involvement (2)

Advances in Resist Technology and Processing XXII

28 February 2005 | San Jose, California, United States

Advances in Resist Technology and Processing XXI

23 February 2004 | Santa Clara, California, United States

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