Mr. Benjamin G. Eynon Profile

Benjamin G. Eynon

Sr. Director, Marketing at Lam Res Corp.

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 20 October 2014 Paper

Paper

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

Shazad Paracha, Eliot Goodman, Benjamin Eynon, Ben Noyes, Steven Ha, Jong-Min Kim, Dong-Seok Lee, Dong-Heok Lee, Sang-Soo Cho, Young Ham, Anthony Vacca, Peter Fiekowsky, Daniel Fiekowsky

Proceedings Volume 9235, 92350Q (2014) https://doi.org/10.1117/12.2070256

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Photomasks, Bridges, Modulation, Lithography, Scanning electron microscopy, Classification systems, Polarization

Read Abstract +

Proceedings Article | 2 April 2014 Paper

Paper

In-line focus monitoring and fast determination of best focus using scatterometry

Steven Thanh Ha, Benjamin Eynon, Melany Wynia, Jeff Schmidt, Christian Sparka, Antonio Mani, Roie Volkovich, SeungHoon Yoon, David Tien, John Robinson, Saroja Ramamurthi

Proceedings Volume 9050, 90502Y (2014) https://doi.org/10.1117/12.2047576

KEYWORDS: Semiconducting wafers, Scanners, Scatterometry, Optical design, Scatter measurement, Finite element methods, Metrology, Semiconductors, Matrices, Lithography

Read Abstract +

Proceedings Article | 2 April 2014 Paper

Paper

Improved reticle requalification accuracy and efficiency via simulation-powered automated defect classification

Shazad Paracha, Benjamin Eynon, Ben Noyes, Anthony Nhiev, Anthony Vacca, Peter Fiekowsky, Dan Fiekowsky, Young Mog Ham, Doug Uzzel, Michael Green, Susan MacDonald, John Morgan

Proceedings Volume 9050, 905031 (2014) https://doi.org/10.1117/12.2048622

KEYWORDS: Reticles, Semiconducting wafers, Inspection, Photomasks, Classification systems, Scanning electron microscopy, Critical dimension metrology, Error analysis, Wafer testing, Defect detection

Read Abstract +

Proceedings Article | 23 September 2013 Paper

Paper

Evaluation of dry technology for removal of pellicle adhesive residue on advanced optical reticles

Shazad Paracha, Samy Bekka, Benjamin Eynon, Jaehyuck Choi, Mehdi Balooch, Ivin Varghese, Tyler Hopkins

Proceedings Volume 8880, 88800M (2013) https://doi.org/10.1117/12.2030686

KEYWORDS: Adhesives, Reticles, Inspection, Pellicles, Chromium, Semiconducting wafers, Silicon, Ions, Air contamination, Particles

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas Resnick, Jeongho Yeo, Hoyeon Kim, Ben Eynon

Proceedings Volume 7028, 70280R (2008) https://doi.org/10.1117/12.793034

KEYWORDS: Semiconducting wafers, Line width roughness, Lithography, Etching, Photomasks, Critical dimension metrology, Beam shaping, Overlay metrology, Manufacturing, Line edge roughness

Read Abstract +

Proceedings Article | 20 March 2008 Paper

Paper

Full-field imprinting of sub-40 nm patterns

Jeongho Yeo, Hoyeon Kim, Ben Eynon

Proceedings Volume 6921, 692107 (2008) https://doi.org/10.1117/12.775115

KEYWORDS: Photomasks, Semiconducting wafers, Line width roughness, Lithography, Etching, Critical dimension metrology, Electron beam lithography, Overlay metrology, Line edge roughness, Manufacturing

Read Abstract +

Proceedings Article | 21 June 2006 Paper

Paper

A new generation of progressive mask defects on the pattern side of advanced photomasks

Brian Grenon, Kaustuve Bhattacharyya, Benjamin Eynon

Proceedings Volume 6281, 62810J (2006) https://doi.org/10.1117/12.692642

KEYWORDS: Photomasks, Ions, Reticles, Lithography, Inspection, Raman spectroscopy, Contamination, Chemical analysis, Air contamination, 193nm lithography

Read Abstract +

The progressive mask defect problem is an industry-wide mask reliability issue. Even if masks are determined to be clean upon arrival from the mask supplier, some of these masks can show catastrophic defect growth over the course of production usage in the fab. The categories of defects that cause reticle-quality degradation over time are defined as progressive defects, commonly known as crystal growth, haze, fungus or precipitate. This progressive defect problem has been around for more than a decade and was observed at almost every lithographic wavelength. This problem is especially severe at 193nm lithography. Triggering the increased severity are shorter wavelength lithography - where the photons are highly energized - and the concurrent transition to 300 mm wafers, which require photomasks to endure more prolonged exposure as compared to 200 mm wafers. Both embedded phase shift masks (EPSMs) and chrome-on-glass masks are affected by progressive defects. These defects are generally found on the patterned surface underneath the pellicle (on clear, half-tone or chrome patterns), as well as on the backside surface of the masks. Past cases have indicated that this problem mainly starts on the scribes and borders, with emerging semi-transmissive contamination of ~100nm. These defects then propagate into the die area while growing in both size and opaqueness. Compositional analysis has shown that the majority of these defects are ammonium sulfate. However, since significant effort focused on the elimination of ammonium sulfate a new trend has emerged. Current studies show severe defect growth consists of organic contaminants (ammonium oxalate, cyanuric acid etc.) on half-tone edges and on chromium edges. The sources for progressive defect mechanisms are under investigation, though several candidates have been considered: maskmaking materials and process residues (mainly ammonium or sulfate ions), the fab environment, or the stepper environment. Controlling or balancing these sources may help to reduce the frequency at which these defects occur, but thus far has been unable to eliminate the problem. With each successive device shrink, the resultant changes in lithographic wavelength and processing within the mask fabrication facility and IC fab disrupt the fine balance among the above suspected defect sources, resulting in the return of catastrophic progressive defect growth. Due to this uncertainty, strict mask quality monitoring in the fab is essential. The ideal reticle quality control goal in a fab should be to detect any nascent progressive defects before they become yield limiting. Hence, the masks should be monitored on an established frequency that allows problem masks to be removed from production and sent for rework prior to impacting device performance and fab yield.

Proceedings Article | 4 November 2005 Paper

Paper

Process window impact of progressive mask defects: its inspection and disposition techniques (go/no-go criteria) via a lithographic detector

Jerry Huang, Lan-Hsin Peng, Chih-Wei Chu, Kaustuve Bhattacharyya, Ben Eynon, Farzin Mirzaagha, Tony Dibiase, Kong Son, Jackie Cheng, Ellison Chen, Den Wang

Proceedings Volume 5992, 599206 (2005) https://doi.org/10.1117/12.632039

KEYWORDS: Photomasks, Sensors, Inspection, Lithography, Semiconducting wafers, Defect inspection, Defect detection, Crystals, Detector development, Deep ultraviolet

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Paper

A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low-k1 lithography

Kaustuve Bhattacharyya, Kong Son, Benjamin Eynon, Dadi Gudmundsson, Carmen Jaehnert, Doris Uhlig

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568874

KEYWORDS: Photomasks, Reticles, Inspection, Semiconducting wafers, Lithography, Failure analysis, Data modeling, Statistical analysis, 193nm lithography, Stochastic processes

Read Abstract +

Proceedings Article | 26 June 2003 Paper

Paper

Limits of strong phase-shift patterning for device research

Michael Fritze, Renee Mallen, Bruce Wheeler, Donna Yost, John Snyder, Bryan Kasprowicz, Benjamin Eynon, Hua-Yu Liu

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485332

KEYWORDS: Optical proximity correction, Photomasks, Etching, Transistors, Optical lithography, Phase shifts, Line edge roughness, Image processing, Photoresist processing, Oxidation

Read Abstract +

Proceedings Article | 26 June 2003 Paper

Paper

Dark-field high-transmission chromeless lithography

George Bailey, Neal Callan, Kunal Taravade, John Jensen, Benjamin Eynon, Patrick Martin, Henry Kamberian, Darren Taylor, Rick Farnbach

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485518

KEYWORDS: Photomasks, Opacity, Scattering, Lithography, Diffraction gratings, Scanning electron microscopy, Manufacturing, Attenuators, Finite element methods, Optical design

Read Abstract +

Proceedings Article | 28 May 2003 Paper

Paper

Through the looking glass: what is on the horizon for the mask maker?

R. Scott Mackay, Benjamin Eynon, Dhirendra Mathur

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.514946

KEYWORDS: Photomasks, Manufacturing, Lithography, Extreme ultraviolet lithography, Glasses, Mask making, Pellicles, Inspection, Optical lithography, Semiconducting wafers

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Paper

Imaging 100-nm contacts with high-transmission attenuated phase-shift masks

James Beach, John Petersen, Benjamin Eynon, Darren Taylor, Dave Gerold, Mark Maslow

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467763

KEYWORDS: Photomasks, Printing, Phase shifts, Scanners, Electroluminescence, Phase measurement, Lithography, Overlay metrology, Manufacturing, Image processing

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Paper

Metrology methods comparison for 2D structures on binary and embedded attenuated phase-shift masks

Matthew Lassiter, Benjamin Eynon

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476969

KEYWORDS: Photomasks, Phase shifts, Inspection, Binary data, Calibration, Semiconducting wafers, Objectives, CCD cameras, Integration, Silica

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Paper

Inspection of chromeless AAPSM

Darren Taylor, Matthew Lassiter, Benjamin Eynon, Douglas Van Den Broeke, J. Fung Chen

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474513

KEYWORDS: Photomasks, Inspection, Phase shifts, Quartz, Manufacturing, Lithography, Silica, Semiconducting wafers, Optical lithography, Defect detection

Read Abstract +

Proceedings Article | 5 September 2001 Paper

Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks

Justin Novak, Benjamin Eynon, Anja Rosenbusch, Alex Goldenshtein

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438407

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Quantum wells, Scattering, Lithography, Calibration, Defect detection, Mask making, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks

Justin Novak, Benjamin Eynon, Eric Poortinga, Anja Rosenbusch, Yair Eran

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410771

KEYWORDS: Photomasks, Opacity, Critical dimension metrology, Lithography, Semiconducting wafers, Phase shifts, Optical proximity correction, Inspection, Scattering, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 2 June 2000 Paper

Paper

Photomask CD correlation of an optical linewidth measurement tool and a scanning electron microscope with reference to a Stylus NanoProfilometer

Bryan Kasprowicz, Benjamin Eynon, Troy Morrison, Chih-Yu Wang

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386490

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Photomasks, Optical testing, Electron microscopes, Optics manufacturing, Interfaces, Calibration, Optical metrology, Diffraction

Read Abstract +

Proceedings Article | 23 April 1999 Paper

Paper

Inspecting the new generation of reticles using UV imaging

Mark Merrill, James Wiley, Benjamin Eynon

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346228

KEYWORDS: Inspection, Optical proximity correction, Photomasks, Ultraviolet radiation, Reticles, Lithography, Visible radiation, Deep ultraviolet, Semiconducting wafers, Defect detection

Read Abstract +

Proceedings Article | 18 December 1998 Paper

Paper

DUV pellicle quality assessment based on customer priorities

James Wood, Benjamin Eynon, Franklin Kalk

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332860

KEYWORDS: Pellicles, Adhesives, Particles, Inspection, Deep ultraviolet, Manufacturing, Photomasks, Semiconductors, Optical inspection, Microscopes

Read Abstract +

Proceedings Article | 1 September 1998 Paper

Paper

100-nm defect detection using an existing image acquistion system

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328857

KEYWORDS: Semiconducting wafers, Reticles, Photomasks, Critical dimension metrology, Inspection, Defect detection, Prototyping, Detection and tracking algorithms, Databases, Manufacturing

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Paper

Killer defects caused by localized sub-100-nm critical dimension reticle errors

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310795

KEYWORDS: Semiconducting wafers, Reticles, Ruthenium, Photomasks, Critical dimension metrology, Inspection, Prototyping, Detection and tracking algorithms, Chlorine, Databases

Read Abstract +

For obvious cost reasons, semiconductor manufacturers are constantly striving to produce ever smaller wafer geometries with the current installed base of wafer steppers. Many techniques (phase shifting, optical proximity correction, etc.) have been used successfully to 'squeeze' more resolution from these steppers than was once thought possible. Wafers processed using non-aggressive k₁ factors provided a linear correlation between mask and wafer feature sizes. However, it has been shown that pushing k₁ factors to very low levels causes a nonlinear response between changes in photomask and wafer critical dimension. This non-linearity demands extremely tight photomask CD control specifications. Total CD errors 50 nm and smaller can cause unacceptable wafer CD variation. Current high end reticle manufacturers are capable of meeting a total CD uniformity specification of approximately 40 nm as measured by sampling strategies using optical metrology tools. These tools are very useful for detecting macro changes in CD; however, they will only detect a localized error if it happens to occur precisely at the point of measurement. In contrast, a pattern inspection system employing a linewidth measurement algorithm can ensure detection of all localized errors within the detection and review capability of the system. The problem with reticle CD error detection capability is that there is a large discrepancy between currently available detection of greater than or equal to 150 nm and required detection of less than or equal to 50 nm necessary for proper wafer functionality at low k₁ lithography. In this paper, defect sensitivity and false detection performance of a new advanced line measurement algorithm was tested. The test vehicles included both an industry standard and a custom designed programmed defect test mask. In addition, production masks with naturally occurring localized CD errors that caused wafer pattern bridging were analyzed. This new experimental algorithm has shown localized CD error detection of less than or equal to 100 nm reticle defects.

Proceedings Article | 12 February 1997 Paper

Paper

New methodology for thoroughly characterizing the performance of advanced reticle inspection platforms

Benjamin Eynon

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301180

KEYWORDS: Reticles, Inspection, Optical proximity correction, Semiconducting wafers, Photomasks, Phase shifts, Semiconductors, Manufacturing, Quartz, Tolerancing

Read Abstract +

Proceedings Article | 12 February 1997 Paper

Paper

100-nm defect detection using an existing image acquisition system

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301193

KEYWORDS: Semiconducting wafers, Reticles, Critical dimension metrology, Photomasks, Inspection, Prototyping, Defect detection, Detection and tracking algorithms, Image acquisition, Lithography

Read Abstract +

For obvious cost reasons, semiconductor manufacturers are constantly striving to produce ever smaller wafer geometries with the current installed base of wafer steppers. Many techniques (phase shifting, optical proximity correction, etc.) have been used successfully to 'squeeze' more resolution from these steppers than was once thought possible. Wafers processed using non-aggressive k₁ factors provided a linear correlation between mask and wafer feature sizes. However, it has been shown that pushing k₁ factors to very low levels causes a nonlinear response between changes in photomask and wafer critical dimension. This non-linearity demands extremely tight photomask CD control specifications. Total CD errors 50 nm and smaller can cause unacceptable wafer CD variation. Current high end reticle manufacturers are capable of meeting a total CD uniformity specification of approximately 40 nm as measured by sampling strategies using optical metrology tools. These tools are very useful for detecting macro changes in CD; however, they will only detect a localized error if it happens to occur precisely at the point of measurement. In contrast, a pattern inspection system employing a linewidth measurement algorithm can ensure detection of all localized errors within the detection and review capability of the system. The problem with reticle CD error detection capability is that there is a large discrepancy between currently available detection of greater than or equal to 150 nm and required detection of less than or equal to 50 nm necessary for proper wafer functionality at low k₁ lithography. In this paper, defect sensitivity and false detection performance of a new advanced line measurement algorithm was tested. The test vehicles included both an industry standard and a custom designed programed defect test mask. In addition, production masks with naturally occurring localized CD errors that caused wafer pattern bridging were analyzed. This new experimental algorithm has shown localized CD error detection of less than or equal to 100 nm reticle defects.

Proceedings Article | 8 December 1995 Paper

Paper

Contributions by blank vendors to critical dimension and defect errors

James Unruh, Benjamin Eynon

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228160

KEYWORDS: Critical dimension metrology, Photomasks, Reticles, Semiconducting wafers, Lithography, Photoresist processing, Manufacturing, Control systems, Etching, Lenses

Read Abstract +

Showing 5 of 26 publications

Conference Committee Involvement (9)

Alternative Lithographic Technologies III

1 March 2011 | San Jose, California, United States

Alternative Lithographic Technologies II

23 February 2010 | San Jose, California, United States

Alternative Lithographic Technologies

24 February 2009 | San Jose, California, United States

Photomask Technology

18 September 2007 | Monterey, California, United States

Photomask Technology

19 September 2006 | Monterey, California, United States

Showing 5 of 9 Conference Committees

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement