The power supply and distribution system and the secondary power supply are important components of the spacecraft platform and payload. In the context of the rapid development of the entire aerospace technology, the development of power products with further light weight, small size, high efficiency and ultra-high power has encountered Technical obstacles. The third-generation wide-bandgap power devices represented by silicon carbide (SiC) and gallium nitride (GaN) will push the aerospace power supply to the megahertz era, realizing a new generation of aerospace with higher efficiency, smaller size and lighter weight power supply. The advantages of SiC power device benchmarks in Si power devices are analyzed, and the key technologies for SiC devices to be widely used are put forward. Finally, the application of SiC devices in the field of aerospace power supply is prospected.
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