Mr. Chia-Wei Chang Profile

Chia-Wei Chang

at National Tsing Hua Univ.

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 30 September 2022 Presentation + Paper

Bias-free GeSn terahertz large area emitter on Si substrate

Chia-Wei Chang, Wang-Chien Chen, Shang-Hua Yang

Proceedings Volume 12230, 1223007 (2022) https://doi.org/10.1117/12.2631706

KEYWORDS: Terahertz radiation, Germanium, Silicon, Photoresistors, Absorption, Thin films, Pulsed laser operation, Femtosecond phenomena, Ultrafast phenomena, Principal component analysis

Read Abstract +

In the past decades, terahertz (THz) large area emitters (LAEs) have been used for broadband THz generation. To achieve broadband operation, the ultrafast photoconductor of THz LAE is mainly based on III-V semiconductor materials, which is designed to offer decent quantum efficiency, high carrier mobility, and low carrier lifetime simultaneously. However, the sophisticated epitaxial process constrains the application scopes of conventional THz LAEs. Here, we present a cost-effective, CMOS-compatible, bias-free GeSn THz LAE on a Si substrate. The GeSn thin film is grown on undoped Si substrate with Ge buffer layer by reduced pressure chemical vapor deposition (RPCVD). Since the charge neutrality level is close to the top of the valence band, a built-in electric field at the surface of GeSn is created by the fermi-level pinning. As the optical absorption coefficient of the GeSn ultrafast photoconductor is higher than 7000 cm^-1 in the 1500 – 1700 nm wavelength range, it can generate a comparable amount of photocarriers as InGaAs-based ultrafast photoconductor. To investigate the broadband operation capability of the bias-free GeSn THz LAE prototypes, we further characterize the carrier dynamics of the epitaxial GeSn thin film. At the optical pump power of 400 mW, the bias-free GeSn THz LAE generates broadband THz radiation with a pulse width of 500 fs full width at half maximum. The GeSn THz LAE can be monolithically integrated on Si photonic platform with the bias-free operation. It paves the way toward THz system-on-chip (SoC) for many on-site applications in non-destructive evaluation, biomedical imaging, and industrial inspections.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years