Prof. Dietrich R. T. Zahn Profile

Prof. Dietrich R. T. Zahn

Prof of Semiconductor Physics at Technische Univ Chemnitz

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Publications (10)

Proceedings Article | 4 October 2011 Paper

Atomic layer deposition of iridium thin films and their application in gold electrodeposition

A. Szeghalmi, M. Arnold, A. Berger, N. Schammelt, K. Fuechsel, M. Knez, E. Kley, D. R. Zahn, A. Tuennermann

Proceedings Volume 8168, 81680K (2011) https://doi.org/10.1117/12.896818

KEYWORDS: Gold, Atomic layer deposition, Iridium, Thin films, Electrodes, Multilayers, Infrared imaging, Transmission electron microscopy, Coating, Metals

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Proceedings Article | 23 September 2005 Paper

Combined Raman spectroscopic and electrical characterization of the conductive channel in pentacene based OFETs

Beynor Paez S., Ilja Thurzo, Georgeta Salvan, Reinhard Scholz, Dietrich Zahn, H. von Seggern

Proceedings Volume 5940, 59400F (2005) https://doi.org/10.1117/12.617511

KEYWORDS: Raman spectroscopy, Field effect transistors, Spectroscopy, Gold, In situ metrology, Interfaces, Electrodes, Dielectrics, Molecules, Metals

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Proceedings Article | 21 September 2005 Paper

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B. Paez, L. Mancera, D. Zahn, C. Pannemann, U. Hilleringmann

Proceedings Volume 5940, 59400I (2005) https://doi.org/10.1117/12.617004

KEYWORDS: Field effect transistors, Resistance, Capacitance, Dielectrics, Oxides, Interfaces, Gold, Molecules, Metals, Atomic force microscope

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Proceedings Article | 17 November 2003 Paper

Interaction of metals with perylene derivatives as a model system for contact formation in OFET structures

Beynor Paez, Georgeta Salvan, Reinhard Scholz, Thorsten Kampen, Dietrich Zahn

Proceedings Volume 5217, (2003) https://doi.org/10.1117/12.505905

KEYWORDS: Metals, Raman spectroscopy, Molecules, Silver, Chemical species, Interfaces, Field effect transistors, Indium, Raman scattering, Plasmons

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Proceedings Article | 17 November 2003 Paper

Combined electrical and Raman characterization of C60-based organic field effect transistors

Beynor Paez, Matthias Bartzsch, Georgeta Salvan, Reinhard Scholz, Thorsten Kampen, Dietrich Zahn

Proceedings Volume 5217, (2003) https://doi.org/10.1117/12.506019

KEYWORDS: Raman spectroscopy, Field effect transistors, Molecules, Molecular spectroscopy, In situ metrology, Fullerenes, Raman scattering, Phonons, Polarizability, Argon ion lasers

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Proceedings Article | 30 September 2003 Paper

Influence of oxidation conditions on the formation of InAs quantum dots in an aluminum oxide matrix

D. Tenne, O. Bajutova, A. Bakarov, Aleksandr Toropov, A. Milekhin, V. Haisler, Dietrich Zahn

Proceedings Volume 5227, (2003) https://doi.org/10.1117/12.520044

KEYWORDS: Indium arsenide, Phonons, Raman spectroscopy, Oxides, Aluminum, Quantum dots, Crystals, Nanostructures, Corundum, Oxidation

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Proceedings Article | 14 April 2003 Paper

Formation of InAs quantum dots in an aluminium oxide matrix by lateral selective wet oxidation

D. Tenne, O. Bajutova, A. Bakarov, Aleksandr Toropov, A. Milekhin, V. Haisler, Dietrich Zahn, A. Gutakovsky

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502292

KEYWORDS: Indium arsenide, Phonons, Oxides, Aluminum, Raman spectroscopy, Crystals, Quantum dots, Gallium arsenide, Laser energy, Oxidation

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Proceedings Article | 1 March 1991 Paper

Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy

Kurt Hingerl, Andreas Pesek, Helmut Sitter, Alois Krost, Dietrich Zahn, W. Richter, Gotthard Kudlek, Juergen Gutowski

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24408

KEYWORDS: Gallium arsenide, Epitaxy, Zinc, Selenium, Raman spectroscopy, Interfaces, Luminescence

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Proceedings Article | 1 March 1991 Paper

Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)

Stefan Morley, Thomas Eickhoff, Dietrich Zahn, W. Richter, D. Woolf, David Westwood, R. Williams

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24397

KEYWORDS: Molecular beam epitaxy, Gallium arsenide, Reflectivity, Far infrared, Transmittance, Phonons, Optoelectronic devices, Silicon, Interferometers, Beam splitters

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Proceedings Article | 1 August 1990 Paper

Boron-doped diamond films on silicon studied by Raman and infrared spectroscopies

Ken Okano, Tateki Kurosu, Masamori Iida, Thomas Eickhoff, Hans Wilhelm, Dietrich Zahn

Proceedings Volume 1275, (1990) https://doi.org/10.1117/12.20513

KEYWORDS: Diamond, Boron, Silicon carbide, Raman spectroscopy, Phonons, Silicon, Infrared radiation, Infrared spectroscopy, Carbon, Chemical vapor deposition

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Showing 5 of 10 publications

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