The reflection of back-scattered electrons (BSE) at the objective lens of an electron beam writer leads to a diffuse resist
exposure which extends over several millimetres. The deposed energy of this unintentional exposure is much lower than
the direct one. However, if the area of the direct electron beam exposure is large enough the accumulated energy is no
longer negligible and may cause significant CD variations. Therefore, it is of crucial importance to study possible ways
of reducing this dose contribution to a minimum and in order to perform a correct proximity correction targeting to
determine its radial distribution.
In this work a model of a 50kV E-Beam writer was developed, consisting of a resist-coated silicon wafer and an opposing low-reflection disk mounted at the pole piece of the objective lens. In order to improve the low-reflection disk, different material compositions as well as an optimized surface topography of the disk are modelled.
KEYWORDS: Monte Carlo methods, Scanning electron microscopy, Chromium, 3D modeling, Sensors, Silica, Scattering, Image acquisition, Electron beams, Photomasks
We present the Monte Carlo simulation program MCSEM, developed at the Physikalisch-Technische Bundesanstalt
(PTB), Germany, for the simulation of Scanning Electron Microscopy (SEM) image formation at arbitrary specimen
structures (e.g. layout structures of wafers or photomasks).
The program simulates the different stages of the SEM image formation process: the probe forming, the probe-sample
interaction and the detection process. A modular program structure is used for an easy adaptation of the program to new
simulation tasks.
Arbitrarily shaped 3D structured specimen models can be applied and different electron probe shapes are modeled.
Various physical models for electron scattering in solid state material are included.
Secondary electron (SE) detection modeling is based on SE raytracing, detectors for backscattered electrons (BSE) and
transmitted electrons (TE) are also available. An electromagnetic field solver is used to simulate charging of the
specimen and the transport of the SE within the electromagnetic field. Some examples of simulation results are presented
together with comparisons with experimental results.
KEYWORDS: Monte Carlo methods, Scanning electron microscopy, Photomasks, Scattering, 3D modeling, Semiconducting wafers, Metrology, Optical simulations, Electron beams, Sensors
Scanning electron microscopy (SEM) is widely used as a fast and high resolution measurement method capable to per-form characterizations of the smallest isolated and dense features which are to be specified and produced on photomasks and wafers down to the 32 nm node and below. Furthermore, electron beam writing tools for mask or direct wafer patterning need electron beam based metrology capabilities for the required high precision alignment purposes. All of these applications benefit from a proper physical understanding of the electron interaction processes in the measured features of interest and suitable simulation capabilities in order to model the measured SEM image or signal contrasts.
In this contribution we will report on a new Monte Carlo based modular simulation package, developed at the PTB and called MCSEM, which allows to model secondary as well as backscattered electron image contrasts on 3-dimensional object features. The fundamentals, basic features as well as first applications of the new simulation package MCSEM in the nanometrology field will be explained. Where appropriate, also other existing Monte Carlo based simulation pack-ages still are in use at the PTB, examples and comparisons with the new MCSEM simulation will be given.
KEYWORDS: Sensors, Signal to noise ratio, Monte Carlo methods, Signal detection, Lithography, Etching, Scattering, Electron beams, Direct write lithography, Vestigial sideband modulation
In this work, we investigated possible geometry optimizations of backscattered electron (BSE) detectors in order to significantly improve the signal to noise ratio (SNR) of shallow Si-topographic marks. To achieve this, Monte Carlo simulations of the BSE angular distribution as well as of the BSE exit position were performed. A comparison of some theoretical calculations with the respective experimental results allowed us to qualify the theoretical results. Based on these results, we are able to present an optimized BSE detector design featuring a significant improvement of the measured SNR.
KEYWORDS: Photomasks, Scanning electron microscopy, Critical dimension metrology, Electrons, Monte Carlo methods, Calibration, Metrology, Silicon, Diffusion, Line edge roughness
Scanning electron microscopy (SEM) is used today and will be used also in the near future as a fast and high resolution
measurement method capable to perform characterizations of the smallest isolated and dense features which are to be
specified and produced on photomasks down to the 32 nm node and perhaps below. It has been demonstrated however,
that SEM based CD metrology results on different mask absorber stacks may show systematic dependencies on the absorber
materials and other stack parameters between different CD-SEM equipment. These mask dependent effects have
to be taken into account for proper cross-correlation of different CD metrology tools, which is required in mask manufacturing
environment.
In this contribution we will report on systematic investigations of simulated and measured SEM profiles of line and
space features present on current and future mask generations as well as on suitable test structures. The investigations
comprise variations of SEM primary energy settings and the response of different edge operators on these variations as
well as variations of edge angle of the mask features. The simulations are based on Monte Carlo methods which are
supplemented by additional phenomenological approaches where appropriate. Simulations of SEM edge contrasts and
the response of different CD-SEM edge algorithms will be described for feature sizes down to 32 nm, because the
smallest assist-features on the mask which have to be controlled with respect to their dimensions are about the same size
as the smallest feature sizes on the wafer.
KEYWORDS: Optical alignment, Monte Carlo methods, Sensors, Silicon, Signal to noise ratio, Signal detection, Semiconducting wafers, Vestigial sideband modulation, Electron beam direct write lithography, Lithography
New types of alignment marks to be applied in electron beam direct write (EBDW) have been studied theoretically and
experimentally.
The dependence of signal contrast and signal form on such mark properties like step height, mark pitch and stack
material has been investigated in detail using Monte Carlo simulations.
The different alignment marks were etched in Si to different depths and the respective alignment repeatability was determined
with a Vistec SB3050 DW lithography tool. Finally, for the most promising mark, test exposures were performed
and the overlay determined.
A new algorithm for SEM CD evaluation of trapezoidal line structures is presented. It is based on the physical modeling
of SEM image formation and allows the assignment of top and bottom structural edge positions to the SEM signal. The
SEM image profile is described by a set of piecewise continuous functions which is convoluted with the electron probe
intensity profile. The resulting function is fitted to the measured signal profile by a least squares algorithm. The fit
returns both top and bottom edge positions as well as the electron probe diameter. The algorithm is verified against three
different Monte Carlo simulation programs using different physical models of elastic and inelastic electron scattering and
secondary electron generation and transport. The effect of the physical modeling on the evaluated critical dimension is
discussed and the absolute CD deviation of the algorithm is determined for different sets of specimen and tool
parameters like edge slope angle, beam energy, and electron probe diameter.
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