Theoretical calculations of the optical properties of InGaAsP quantum well (QW) electroabsorption modulators (EAM's)
operating at c-band (~1550 nm wavelength) is presented. Absorption coefficients of QW's are obtained from the linear
optical susceptibility. Excitons are calculated in momentum space, which includes valence-band mixing, mixing of
excitons originating in different subband pairs, and exciton spin-related optical selection rules. Various line-broadening
mechanisms relevant to InGaAsP-QW's are also included. Investigations on asymmetric double QW's (ADQW's) show
that the small-signal modulation efficiency, which is an important figure of merit for analog application, can be
enhanced significantly at substantially reduced operating bias voltage. Simple optimization of ADQW band structure
results in a maximum slope efficiency ~3.8 times larger than that of SQW EAM's at a reduced operating bias field of 34
kV/cm compared with ~70 kV/cm for comparable SQW's.
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