In situ characterization methods are being developed at the Idaho National Laboratory that can be used to characterize
the atomic lattice structure of materials used for semiconductor and scintillation detectors during the crystal growth and
heat treatment processes, which have been shown to be critical for the development of optimized semiconductor and
scintillation radiation detectors. Multiple methods for implanting positrons into the material have been developed and
integrated with measurement techniques including Doppler broadening, coincidence Doppler broadening and positron
lifetime measurement. The INL developed induced positron technique allows positron measurements to be performed at
depth up to 10 cm inside crystal boules. Also, a portable measurement system suitable for field use has been developed
that is suitable for assessing heat treatments at depths up to 1 cm inside a material in an industrial environment. Results
of measurements that address the effects of composition and heatup/melting/cool down on material lattice structures are
discussed along with plans for the in situ crystal studies.
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