Dr. Eungnak Han Profile

Dr. Eungnak Han

Engineer at Intel

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Publications (4)

Proceedings Article | 10 April 2024 Presentation

DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification

Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Robert Seidel, Sandra Murcia, Lauren Doyle, Nityan Nair, Nafees Kabir, Sean Pursel, David Shykind, Todd Hoppe, Florian Gstrein

Proceedings Volume PC12956, PC129560P (2024) https://doi.org/10.1117/12.3012612

KEYWORDS: Directed self assembly, Extreme ultraviolet, Materials processing, Extreme ultraviolet lithography, Block copolymers, Surface roughness, Scanners, Optical lithography, Objectives, Fabrication

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Proceedings Article | 20 March 2015 Paper

Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch

Eungnak Han, Todd Younkin, Manish Chandhok, Alan Myers, Tristan Tronic, Florian Gstrein, Kranthi Elineni, Ashish Gaikwad, Paul Nyhus, Praveen Setu, Charles Wallace

Proceedings Volume 9425, 94250O (2015) https://doi.org/10.1117/12.2086094

KEYWORDS: Etching, Photoresist developing, Wet etching, Scanning electron microscopy, Polymethylmethacrylate, Annealing, Dry etching, Photoresist materials, Picosecond phenomena, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Extending resolution limits of EUV resist materials

Marie Krysak, Michael Leeson, Eungnak Han, James Blackwell, Shane Harlson

Proceedings Volume 9422, 942205 (2015) https://doi.org/10.1117/12.2086276

KEYWORDS: Extreme ultraviolet, Etching, Photoresist materials, Extreme ultraviolet lithography, Scanning electron microscopy, Particles, Nanoparticles, Semiconducting wafers, Photoresist processing, Chemically amplified resists

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Proceedings Article | 17 March 2015 Paper

A facile route for fabricating graphene nanoribbon array transistors using graphoepitaxy of a symmetric block copolymer

Jonathan Choi, Myungwoong Kim, Nathaniel Safron, Eungnak Han, Michael Arnold, Padma Gopalan

Proceedings Volume 9428, 94280T (2015) https://doi.org/10.1117/12.2085836

KEYWORDS: Graphene, Etching, Field effect transistors, Oxygen, Electrodes, Nanostructures, Oxides, Silicon, Plasma, Nanolithography

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