Mr. Fahad M. Almasoudi Profile

Fahad M. Almasoudi

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Publications (6)

Proceedings Article | 7 September 2018 Presentation + Paper

Comparative study of Heatsink materials for Gallium Nitride HEMT modules using thermal modelling

Mahesh Manandhar, Khaled Alatawi, Fahad Almasoudi, Mohammad Matin

Proceedings Volume 10754, 1075408 (2018) https://doi.org/10.1117/12.2323305

KEYWORDS: Heatsinks, Field effect transistors, Gallium nitride, Copper, Aluminum, Silicon, 3D modeling, Solid modeling, Thermal modeling, Semiconductors

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Proceedings Article | 23 August 2017 Paper

Highly efficient GaN HEMTs transformer-less single-phase inverter for grid-tied fuel cell

Khaled Alatawi, Fahad Almasoudi, Mohammad Matin

Proceedings Volume 10381, 1038109 (2017) https://doi.org/10.1117/12.2275511

KEYWORDS: Switching, Gallium nitride, Field effect transistors, Renewable energy, Energy efficiency, Solar cells, Scientific research, Transformers, Capacitance

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Proceedings Article | 23 August 2017 Paper

High efficiency H6 single-phase transformerless grid-tied PV inverter with proposed modulation for reactive power generation

Fahad Almasoudi, Khaled Alatawi, Mohammad Matin

Proceedings Volume 10381, 103810D (2017) https://doi.org/10.1117/12.2275572

KEYWORDS: Photovoltaics, Silicon carbide, Field effect transistors, Solar cells, Switches, Switching, Renewable energy, Solar energy, Energy efficiency, Reliability

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Proceedings Article | 19 September 2016 Paper

Switching performance and efficiency investigation of GaN based DC-DC Buck converter for low voltage and high current applications

Khaled Alatawi, Fahad Almasoudi, Mohammad Matin

Proceedings Volume 9957, 99570C (2016) https://doi.org/10.1117/12.2238142

KEYWORDS: Switching, Gallium nitride, Field effect transistors, Silicon carbide, Silicon, Resistance, Capacitors, Information operations, Electronic components, Fast packet switching

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Proceedings Article | 19 September 2016 Paper

Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

Fahad Almasoudi, Khaled Alatawi, Mohammad Matin

Proceedings Volume 9957, 99570K (2016) https://doi.org/10.1117/12.2238195

KEYWORDS: Silicon carbide, Switching, Field effect transistors, Photovoltaics, Silicon, Resistance, Diodes, Switches, Gallium nitride, Semiconductors

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Showing 5 of 6 publications

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