In this study. optical carrier and data, which is coining from the 1550 am. CW laser-diode is modulated by using an external optical modulator. The noise that is obtained from the Gaussian white noise source is added to the modulated signal with the help of optical combiners. This combined signal is inputted to the Rarnan Amplifier and the data is transmitted in a 80 kin. fiber optic transmission system. The system is implemented by using chaotic communication tecirnique and the chaotic signal is obtained out of laser diode. Non-return to zero (NRZ) network system is selected in the design.
A model is developed for the carrier induced refractive-index change in Quantum-well (QW) lasers which affects different mechanisms. The model is based on Artificial Neural Network (ANN) which provides a powerful approach for setting up a complex non-linear model. Different algorithms are tried and tested for different injection current levels. Both the training and the test results for refractive-index change are in very good agreement with the experimental findings reported elsewhere.
A different method to determine α (Alpha) parameter for different number of Quantum-wells is presented. The Levenberg-Marquardt algorithm is used to train the Artificial Neural Networks (ANNs) which has a quadratic speed of convergence. Both the computed and the test results are in very good agreement with the experimental results reported elsewhere.
An optoelectronic feedback (OEF) and optical reflected power (ORP, optical feedback) system theory of the single-mode laser diode is developed with the inclusion of Volterra model in this paper. The bandwidth of the whole system is increased compared to the usage of an OEF only. The critical values for both feedbacks are also determined for stable operation conditions.
A different method and single model to determine the linewidth enhancement factor [α (Alpha) parameter] for narrow and wide GaAs Quantum-wells (QWs) as a function of modal peak gain and current density is presented. Based on the Artificial Neural Network (ANN) modeling approach, different learning algorithms are trained and tested. Both the training and the test results are in very good agreement with the experimental results reported elsewhere.
In this study external-cavity laser diodes is analysed from the rate equations approach. Optical power distribution in to the modes is examined as a function of external cavity length and mode number. Also phase variation is analysed in the same way.
Laser Diodes are one of the most important part of fiber-optic communication systems. Therefore proper operating point is always at least a necessary condition to achieve the desired operation. In this study , the intensity modulation is applied to the external cavity laser diode. The chaos with in the system is removed and proper operating condition is achieved by optimizing the external cavity length. The simulation is completely based on time domain approach.
The Linewidth enhancement factor (Alpha factor) is a key parameter in optical system design in terms of both continuous wave operation and hight frequency modulation conditions. Since the linewidth is reduced in external cavity configuration by weak optical feedback, the role of Alpha factor is simulated in such a condition. Both the values of Alpha and feedback parameters are optimized in such a system.
In this study, semiconductor laser diode is analysed using subcarrier modulation technique. A new approach to intermodulation distortion is obtained with the help of the Volterra Kernels in frequency domain. Computer results are more closer to experimental values elsewhere.
In this study, amplitude-phase relationship of laser diodes is analyzed under modulation with the help of the transfer functions. The dynamic behavior of laser diodes is observed as functions of both damping and relaxation resonance frequencies. Within the linear system approach, the amplitude-phase relationship is harmonious up to some extent and both of them have dependence on each other. Phase changes occurring within the system are not stable and cause oscillations which prevent the system from stable working. These oscillations have some threshold value and the system may be driven in to chaos after this point.
In this study the effect of optical feedback in semiconductor laser diodes (LD) has been examined using small signal analysis. The transfer function of LD is given as H (j(omega) m)D and transfer function of external cavity LD is given as TF (j(omega) m)HD respectively. The investigated parameters of these transfer functions are external cavity length (Lext), line-width enhancement factor ((alpha) ) and mirror power reflection coefficient (R). The gain change occurring due to optical feedback noise is shown by broadening the bandwidth and narrowing the frequency spectra and the state of chaos (coherence collapse) is determined in each case. By varying the level of reflected optical feedback power (fext) the optical feedback system of LD has been improved. In addition to that the system is driven out of chaos by finding reasonable levels for these variables.
In this study, static and dynamic behavior of a three cavity laser diode model have been analyzed and oscillation frequency shift under the dynamic structure is explained theoretically. In the analysis, the effect of both the laser facet and the external cavity reflectivities as well as the lengths on the threshold conditions are investigated theoretically. The results have shown that when the optical feedback is increased depending upon the phase of the reflected field, the threshold gain of the laser is decreased. The results indicate that strong optical feedback, AR coating of the laser facet and large external cavity lengths are effect for the frequency shift suppression.
The effect of optical confinement factor and gain constant (optical gain coefficient) on harmonic distortion in 1.55 micrometers semiconductor laser diodes are investigated by using a mathematical model based on multi-mode rate equations. The model can be extended and used to simulate the output of any direct modulated Fabry-Perot semiconductor laser in long wavelength by changing some of the parameters. Gain and spontaneous emission are included as spectrums, since each mode experiences different gain and spontaneous emission coupled to each mode is different. The important parameters such as Auger recombination, nonradiative recombination, spontaneous emission life time and gain saturation are included in the model. The second harmonic distortion levels are examined and computed graphically for different threshold levels.
In this study, external cavity laser diode has been modeled and non-linear equations of system are being solved by using Volterra series. In the study, linearized laser diodes rate equations are reorganized for external cavity and these equations are solved with harmonic input method using Volterra series. The transfer functions brought about for harmonics are obtained using Volterra-Weiner series approach. The stability analysis of system is compared from output to input using these transfer functions. Nyquist stability criteria have been used in the analysis.
In this study, different second harmonic distortion (2HD) levels of a 1.55 micrometers , InGaAsP ridge waveguide laser diode are investigated by using a mathematical model based on multi-mode rate equations. The rate equations with an input current i are solved numerically by using fourth order Runge-Kutta algorithm for frequencies ranging from 1 GHz to 10 GHz with 1 GHz steps and the standard parameter values. The important parameters of 1.55 micrometers . InGaAsP semiconductor lasers such as Auger recombination, non- radiative recombination, spontaneous emission lifetime and gain saturation are taken into account. The effects of some parameters on 2HD for different threshold levels are examined and computed graphically.
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