Dr. Filip Schleicher Profile

Dr. Filip Schleicher

at imec

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 10 April 2024 Presentation + Paper

Machine learning methods for voltage contrast yield analysis

D. Cerbu, V. Blanco Carballo, F. Schleicher, J. van de Kerkhove, P. Leray, N. Kissoon, E. De Poortere

Proceedings Volume 12955, 129551C (2024) https://doi.org/10.1117/12.3011142

KEYWORDS: Semiconducting wafers, Machine learning, Image processing, Design, Scanning electron microscopy

Read Abstract +

Proceedings Article | 28 April 2023 Poster + Paper

BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP

Yannick Hermans, Chen Wu, Nunzio Buccheri, Filip Schleicher, Janko Versluijs, Daniel Montero, Bappaditya Dey, Patrick Wong, Paulina Rincon-Delgadillo, Seongho Park, Zsolt Tokei, Philippe Leray, Sandip Halder

Proceedings Volume 12494, 1249414 (2023) https://doi.org/10.1117/12.2657917

KEYWORDS: Optical lithography, Semiconducting wafers, Lithography, Back end of line, Resistance, Extreme ultraviolet lithography, Etching, Critical dimension metrology

Read Abstract +

SPIE Journal Paper | 13 October 2022

Predictive compact model for stress-induced on-product overlay correction

Huaichen Zhang, Cyrus Tabery, Ruben Maas, Oleksandr Khodko, Victor Blanco Carballo, Eren Canga, Filip Schleicher

JM3, Vol. 21, Issue 04, 043201, (October 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.043201

KEYWORDS: Semiconducting wafers, Overlay metrology, Distortion, Thin films, Optical alignment, Scanning electron microscopy, Sensors, Photomasks, Data modeling, Optical parametric oscillators

Read Abstract +

Proceedings Article | 25 May 2022 Presentation + Paper

Tone reversal patterning for advanced technology nodes

F. Schleicher, J. Bekaert, A. Thiam, S. Decoster, R. Blanc, F. Lazzarino, J. Garcia Santaclara, G. Rispens, M. Maslow

Proceedings Volume 12056, 1205605 (2022) https://doi.org/10.1117/12.2610941

KEYWORDS: Etching, Optical lithography, Critical dimension metrology, Inspection, Photomasks, Line edge roughness, Atomic layer deposition, Line width roughness, Extreme ultraviolet

Read Abstract +

Proceedings Article | 25 May 2022 Presentation + Paper

Buried power rail integration for CMOS scaling beyond the 3 nm node

A. Gupta, Z. Tao, D. Radisic, H. Mertens, O. Varela Pedreira, S. Demuynck, J. Bömmels, K. Devriendt, N. Heylen, S. Wang, K. Kenis, L. Teugels, F. Sebaai, C. Lorant, N. Jourdan, B. Chan, S. Subramanian, F. Schleicher, A. Peter, N. Rassoul, Y. Siew, B. Briggs, D. Zhou, E. Rosseel, E. Capogreco, G. Mannaert, A. Sepúlveda, E. Dupuy, K. Vandersmissen, B. Chehab, G. Murdoch, E. Altamirano Sanchez, S. Biesemans, Zs. Tőkei, E. Dentoni Litta, N. Horiguchi

Proceedings Volume 12056, 120560B (2022) https://doi.org/10.1117/12.2615641

KEYWORDS: Ruthenium, Metals, Molybdenum, Etching, Tungsten, Front end of line, Chemical mechanical planarization, Silicon

Read Abstract +

Proceedings Article | 19 October 2021 Presentation + Paper

Towards high NA patterning readiness: materials, processes and etch transfer for P24 Line Space

A. Thiam, J. G. Santaclara, J-H. Franke, F. Schleicher, R. Blanc, P. Bezard, A. Moussa, P. Wong, E. Hendrickx, M. Maslow

Proceedings Volume 11854, 118540A (2021) https://doi.org/10.1117/12.2601839

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Optical lithography, Scanning electron microscopy, Photoresist processing, Lithography, Atomic force microscopy, Photoresist developing, Oxides

Read Abstract +

Proceedings Article | 26 February 2021 Presentation + Paper

28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

D. De Simone, L. Kljucar, P. Das, R. Blanc, C. Beral, J. Severi, N. Vandenbroeck, P. Foubert, A. Charley, A. Oak, D. Xu, W. Gillijns, J. Mitard, Z. Tokei, M. van der Veen, N. Heylen, L. Teugels, Q. T. Le, F. Schleicher, P. Leray, K. Ronse, Il Hwan Kim, Insung Kim, Changmin Park, Jisun Lee, Koungmin Ryu, P. De Schepper, J. Doise, M. Kocsis

Proceedings Volume 11609, 116090Q (2021) https://doi.org/10.1117/12.2584713

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Oxides, Metals, Extreme ultraviolet, Scanners, Scanning electron microscopy, Photoresist processing, Lithography, Line edge roughness

Read Abstract +

For many years traditional 193i lithography has been extended to the next technology node by means of multi-patterning techniques. However recently such a 193i technology became challenging and expensive to push beyond the technology node for complex features that can be tackled in a simpler manner by the Extreme UltraViolet Lithography (EUVL) technology. Nowadays, EUVL is part of the high-volume manufacturing device landscape and it has reached a critical decision point where one can push further the single print on 0.33NA full field scanner or move to a EUV double patterning technology with more relaxed pitches to overcome current 0.33NA stochastic limits. In this work we have selected the 28nm pitch dense line-space (P28) as critical decision check point. We have looked at the 0.33NA EUV single print because it is more cost effective than 0.33NA EUV double patterning. In addition, we have conducted a process feasibility study as P28 in single print is close to the resolution limit of the 0.33NA EUV full field scanner. We present the process results on 28nm dense line-space patterning by using Inpria’s metal-oxide (MOx) EUV resist. We discuss the lithographic and etching process challenges by looking at resist sensitivity, unbiased line edge roughness (LER) and nano patterning failures after etching (AE), using broad band plasma (BBP) and e-beam (EB) defectivity inspection tools. To get further understanding on the P28 single patterning capability we have integrated the developed EUV MOx process in a relevant iN7 technology test vehicle by developing a full P28 metallization module with ruthenium. In such a way we were able to carry on electrical tests on metallized serpentine, fork-fork and tip-to-tip structures designed with a purpose of enabling further learning on pattern failures through electrical measurements. Finally, we conclude by showing the readiness of P28 single exposure using Inpria’s MOx process on a 0.33NA EUV full field scanner.

Proceedings Article | 26 September 2016 Paper

Oxygen-vacancy driven tunnelling spintronics across MgO

U. Halisdemir, F. Schleicher, D. J. Kim, B. Taudul, D. Lacour, W. S. Choi, M. Gallart, S. Boukari, G. Schmerber, V. Davesne, P. Panissod, D. Halley, H. Majjad, Y. Henry, B. Leconte, A. Boulard, D. Spor, N. Beyer, C. Kieber, E. Sternitzky, O. Cregut, M. Ziegler, F. Montaigne, J. Arabski, E. Beaurepaire, W. Jo, M. Alouani, P. Gilliot, M. Hehn, M. Bowen

Proceedings Volume 9931, 99310H (2016) https://doi.org/10.1117/12.2239017

KEYWORDS: Spintronics, Oxygen, Magnetism, Absorption, Electrodes, Spintronics, Luminescence, Electrons, Interfaces, Annealing, Dielectrics

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years