Dr. Hans-Jürgen Lugauer Profile

Dr. Hans-Jürgen Lugauer

at ams-OSRAM International GmbH

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Author

Publications (8)

Proceedings Article | 14 March 2023 Presentation

Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates (Conference Presentation)

T. Schulz, L. Lymperakis, S.-H. Yoo, Artur Lachowski, H. Foronda, C. Brandl, H.-J. Lugauer, M. P. Hoffmann, Martin Albrecht

Proceedings Volume PC12441, PC124410G (2023) https://doi.org/10.1117/12.2649967

KEYWORDS: Aluminum nitride, Gallium, Aluminum, Scanning electron microscopy, Etching, Transmission electron microscopy, Diffusion, X-ray diffraction, Surface finishing, Wet etching

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Proceedings Article | 4 March 2022 Presentation + Paper

UV-C LEDs and their use in disinfection applications

Alexander Wilm, Christian Leirer, Hans-Juergen Lugauer, Marc Patrick Hoffmann

Proceedings Volume 12022, 1202206 (2022) https://doi.org/10.1117/12.2608513

KEYWORDS: Light emitting diodes, Lamps, Transparent conductors, Light sources, Light sources and illumination, Water, Mercury, UV optics, Ultraviolet detectors, Switching

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Proceedings Article | 14 March 2018 Presentation

Carrier localization in InGaN-based light-emitting diodes (Conference Presentation)

Felix Nippert, Sergey Karpov, Markus Wagner, Gordon Callsen, Thomas Kure, Bastian Galler, Hans-Jürgen Lugauer, Martin Strassburg, Axel Hoffmann

Proceedings Volume 10554, 105540D (2018) https://doi.org/10.1117/12.2292437

KEYWORDS: Light emitting diodes, Quantum efficiency, Applied physics, Indium, Electrons, Quantum wells, Electro optics, Electroluminescence, Internal quantum efficiency, Indium gallium nitride

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Proceedings Article | 8 March 2016 Paper

AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Amit Yadav, Ilya Titkov, Grigorii Sokolovskii, Sergey Karpov, Vladislav Dudelev, Ksenya Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik Rafailov

Proceedings Volume 9768, 97681K (2016) https://doi.org/10.1117/12.2213344

KEYWORDS: Continuous wave operation, Light emitting diodes, Aluminium gallium indium phosphide, Crystals, Modeling, LED lighting, Solid state lighting, Indium gallium nitride, External quantum efficiency, Electroluminescence, Quantum wells, Gallium arsenide, Oscilloscopes, Photonics

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Proceedings Article | 8 March 2016 Paper

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

Tilman Schimpke, H.-J. Lugauer, A. Avramescu, T. Varghese, A. Koller, J. Hartmann, J. Ledig, A. Waag, M. Strassburg

Proceedings Volume 9768, 97680T (2016) https://doi.org/10.1117/12.2214122

KEYWORDS: 3D microstructuring, Electroluminescence, Microtechnology, Nanoepitaxy, Optical microcavities, Light emitting diodes, Quantum wells, 3D metrology, Gallium nitride, Transmission electron microscopy, Nanolithography, Electro optics, Indium gallium nitride, Vapor phase epitaxy, External quantum efficiency, Photomasks, Semiconducting wafers, Transparent conductors, Luminescence

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Proceedings Article | 26 September 2007 Paper

GaInN LEDs: straight way for solid state lighting

U. Zehnder, B. Hahn, J. Baur, M. Peter, S. Bader, H. Lugauer, A. Weimar

Proceedings Volume 6797, 67970E (2007) https://doi.org/10.1117/12.759472

KEYWORDS: Light emitting diodes, Solid state lighting, Lamps, Indium gallium nitride, External quantum efficiency, Headlamps, Mirrors, LCDs, Light sources and illumination, Internal quantum efficiency

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Proceedings Article | 7 July 1998 Paper

Beryllium-containing II-VI semiconductor devices

Andreas Waag, Frank Fischer, H.-J. Lugauer, Karl Schuell, U. Zehnder, T. Gerhard, M. Keim, G. Reuscher, Gottfried Landwehr

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316665

KEYWORDS: Beryllium, Gallium arsenide, Semiconductor lasers, Etching, Interfaces, Silicon, Quantum wells, Selenium, Information operations, Thin films

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Proceedings Article | 6 June 1997 Paper

Beryllium-containing materials for II-VI laser diodes

Andreas Waag, Th. Litz, Frank Fischer, H.-J. Lugauer, Robert Gunshor, Gottfried Landwehr

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275564

KEYWORDS: Beryllium, Gallium arsenide, Semiconductor lasers, Light emitting diodes, Doping, Quantum wells, Chalcogenides, Sulfur, Magnesium, Zinc

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Showing 5 of 8 publications

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