The complementary tools of atomic force microscopy (AFM) and Raman spectroscopy are used to extract information
on the microstructural properties of nanocomposite n-doped Si (n-Si) and Ag/n-Si films deposited on Si(111) substrates
at 400 °C and 550 °C. AFM measurements indicated that Ag/n-Si films had grain sizes and roughness values one order
of magnitude higher than n-doped Si films. The onset of metal-mediated crystallization of a-Si in Ag/n-Si films at ~ 400
°C is confirmed by Raman spectroscopy. Spectral Raman red-shifts of the transverse optical phonon region compared to
monocrystalline silicon originate from the interplay of phonon confinement and higher defect density caused by n-type
doping. Two protocols using the etchants ammonium fluoride - HF (2%::4% ) and ammonium citrate- acetic acid-hydrogen
peroxide (2.5%::2.5%::2%) solutions were investigated. A comparison between non-etched and etched films
showed little variability in roughness indicating retention of the microstructure.
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