Ms. Jennifer M. Fullam Profile

Jennifer M. Fullam

at IBM Thomas J. Watson Research Ctr.

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Author

Publications (7)

Proceedings Article | 10 April 2024 Presentation

Controlling patterning uniformity in thick resist lithography

Christopher Bottoms, Alexander Hamer, Alejandro Mejia, Alex Hubbard, Nicholas Latham, Katherine Sieg, Jennifer Fullam, Vinay Pai, Junwon Han, Juan-Manuel Gomez, Christopher Waskiewicz, Shahid Butt

Proceedings Volume PC12956, PC129560E (2024) https://doi.org/10.1117/12.3012541

KEYWORDS: Optical lithography, Lithography, Coating thickness, Semiconducting wafers, Plating, Photoresist processing, Dielectrics, Coating

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Proceedings Article | 13 June 2022 Presentation

Resist shrink characterization methodology for more accurate CD metrology

Mary Breton, Karen Petrillo, Jennifer Church, Luciana Meli, Jennifer Fullam, Stuart Sieg, Romain Lallement, Nelson Felix, Shimon Levi, Susan Zollinger, Felix Levitov, Sean Hand, Jason Osborne, Weijie Wang

Proceedings Volume PC12053, PC120530C (2022) https://doi.org/10.1117/12.2614219

KEYWORDS: Critical dimension metrology, Metrology, Scanning electron microscopy, Photoresist materials, Optical proximity correction, Process modeling, Data modeling, Photomasks, Lithography, Extreme ultraviolet lithography

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Proceedings Article | 2 April 2020 Presentation + Paper

AFM characterization for Gate-All-Around (GAA) devices

Mary Breton, Jennifer Fullam, Dexin Kong, Daniel Schmidt, Andrew Greene, Julien Frougier, Sean Hand, Jason Osborne, Weijie Wang, David Fey

Proceedings Volume 11325, 1132514 (2020) https://doi.org/10.1117/12.2551931

KEYWORDS: Atomic force microscopy, Metrology, Transmission electron microscopy, Gallium arsenide, 3D metrology, Measurement devices, Scanning electron microscopy, Semiconducting wafers, Visualization, X-ray optics

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Proceedings Article | 20 March 2020 Presentation + Paper

Line top loss and line top roughness characterizations of EUV resists

D. Schmidt, K. Petrillo, M. Breton, J. Fullam, S. Hand, J. Osborne, W. Wang, D. Fey

Proceedings Volume 11325, 113250T (2020) https://doi.org/10.1117/12.2551623

KEYWORDS: Line edge roughness, Metrology, Atomic force microscopy, Extreme ultraviolet, Semiconducting wafers, Scatterometry, Critical dimension metrology, Stochastic processes, Calibration, Scanning electron microscopy

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Proceedings Article | 28 April 2011 Paper

High-throughput critical dimensions uniformity (CDU) measurement of two-dimensional (2D) structures using scanning electron microscope (SEM) systems

Jennifer Fullam, Carol Boye, Theodorus Standaert, John Gaudiello, Derek Tomlinson, Hong Xiao, Wei Fang, Xu Zhang, Fei Wang, Long Ma, Yan Zhao, Jack Jau

Proceedings Volume 7971, 79710Y (2011) https://doi.org/10.1117/12.879910

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Inspection, Electron microscopes, Defect inspection, Data acquisition, Etching, Field effect transistors

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Proceedings Article | 5 April 2007 Paper

Characterization of resist thinning and profile changes using scatterometry

Jennifer Fullam, Karen Petrillo

Proceedings Volume 6518, 65184M (2007) https://doi.org/10.1117/12.712308

KEYWORDS: Scatterometry, Lithography, Scanning electron microscopy, Photoresist materials, Critical dimension metrology, Metrology, Immersion lithography, Nondestructive evaluation, Photoresist processing, Dispersion

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Scatterometry is emerging as a prominent metrology technique for lithography. Not only does scatterometry produce line profile information such as sidewall angle and height along with line width, but the speed and nondestructive nature of scatterometry accommodates in-line process applications. Scatterometry systems employ reflectometry or ellipsometry to acquire spectra resulting from the interaction of the input radiation and a symmetrical grating array. The systems may use fixed wavelengths or a range of wavelengths. The output spectral data is dependent on the material and physical properties of the grating array and surrounding (subsurface, film stack) material layers. Typical scatterometry draws on mathematically modeled spectra from known optical and physical parameters such as the grating pitch and the index of refraction and absorption coefficient functions of the film stack materials. The optical properties of the materials in the film stack are of particular interest and critical to scatterometry. Material vendors typically supply constants associated with the optical dispersion models of resists and anti-reflective coatings used in lithography. These constants are most often based on a Cauchy model for optical dispersion, a very simple model. However, the optical properties of the photoresist or other coatings may not fit well to a Cauchy model or they may change during process baking, exposure or just from aging. To make an accurate scatterometry model for patterned photoresist, the material characteristics must also be modeled. Using these parameters, an accurate picture of the lithographic materials can be generated. These methods can be applied to both dry and immersion lithography. As immersion lithography gains a foothold in the manufacturing line, many initial processes will use standard dry photoresist with the application of an immersion topcoat to protect the final lens element of the lithography tool, and to reduce defects formed from substances leaching out of the photoresist. Although the goal for an immersion topcoat is to be neutral to the resist process in terms of profiles, process windows, and CD control, many topcoats are not completely benign. Topcoat induced resist thinning is a common but unwelcome attribute. In this paper we discuss the use of scatterometry to characterize topcoat induced thickness changes, and use this technique to evaluate several commercially available products. We will also demonstrate the ability of scatterometry to accurately determine resist profile changes as a result of focal changes, topcoat interactions, and airborne contamination. Measurement stability results are also shown, and correlation to CD-SEM and cross-section SEM are provided as a reference metrology.

Proceedings Article | 9 March 2006 Paper

Characterization of imaging performance for immersion lithography at NA=0.93

Dario Gil, Jaione Tirapu-Azpiroz, Ryan Deschner, Timothy Brunner, Carlos Fonseca, Jennifer Fullam, Dan Corliss, K. Auschnitt, Peter Vanoppen

Proceedings Volume 6154, 615405 (2006) https://doi.org/10.1117/12.656545

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Immersion lithography, Monte Carlo methods, Scanners, Photomasks, Optical proximity correction, Optical lithography, Lithography, Manufacturing

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