Mr. Jinhong Park Profile

Jinhong Park

Principal Engineer at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (29)

Proceedings Article | 16 April 2024 Presentation + Paper

Presentation + Paper

SEM overlay target design optimization by e-beam simulation

Il Hwan Kim, Cheolgyu Hyun, Sangho Jo, Muyoung Lee, Ikjun Jang, Jongsu Kim, Jinhong Park, Yigwon Kim, Chang Min Park, Kevin Houchens, Jenny Perry, Nahum Bomshtein, Liad Anokov, Noam Oved, Uri Smolyan, Michael Shifrin, Tal Itzkovich, Jeong Ho Yeo, You jin Kim, Baek Jun Kim

Proceedings Volume 12955, 129551I (2024) https://doi.org/10.1117/12.3010511

KEYWORDS: Design, Scanning electron microscopy, Overlay metrology, Monte Carlo methods, Electrons, Lithography, Precision measurement, Electron beam lithography, Design rules, Signal detection

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Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Advanced wafer engineering for minimizing overlay: tailoring and reducing wafer stress and distortion

Jong-Gu Lee, Hyeon-Jin Kim, JinMan Kim, HongJu Kim, Seok Heo, HaRam Ko, SungBin Jeon, Young Ha Kim, Jinhong Park, Hyunjae Kang, Jeong-Gil Kim

Proceedings Volume 12954, 129540D (2024) https://doi.org/10.1117/12.3010045

KEYWORDS: Semiconducting wafers, Wafer bonding, Distortion, Overlay metrology, Matrices, Deformation, Engineering, Crystals, Chemical mechanical planarization, Silicon

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Proceedings Article | 27 April 2023 Presentation + Paper

Presentation + Paper

SEM ADI on device overlay: the advantages and outcome

Sangho Jo, Jongsu Kim, Youngsik Park, Muyoung Lee, Jinhong Park, Changmin Park, Jeong-Ho Yeo, Yaniv Abramovitz, You Jin Kim, Asaf Shoham, Shmuel Ben Nissim

Proceedings Volume 12496, 124960K (2023) https://doi.org/10.1117/12.2657672

KEYWORDS: Scanning electron microscopy, Overlay metrology, Semiconducting wafers, Scanners, Optical parametric oscillators, Measurement devices, Lithography, Error control coding, Optical alignment, Metrology

Read Abstract +

The advanced logic node is continuously shrinking toward sub-nm node and EUV lithography is the one of main drivers to reach better patterning resolution resulting in reduced process steps. Along with this design rule shrink, On Product Overlay (OPO) requirement has been critical to the device yield making the accuracy and stability of optical overlay measurement to become primary concern on the lithography process control. Historically Optical Microscope (OM) ADI overlay was accepted and the standard for control to meet OPO requirements. Along the past years, as OPO budget diminishes with node-to-node, OM overlay required additional supporting reference data to compensate the inherent accuracy problem. Industry adopted the accuracy correction knob with High Voltage SEM (HV-SEM) at post etch, also known as SEM AEI overlay. The SEM AEI overlay measures the error contribution of different process influence and the overlay mark to real device pattern overly bias together. The inaccuracy of OM ADI overlay has been treated as a non-correctable error components till the on-device overlay measurement of HV-SEM after etching was enabled to compensate the delta known as Non-Zero Offset (NZO) or Mis-Reading Correction (MRC). Today the HV-SEM on-device overlay measurement at AEI is widely adopted as one of critical component to meet the OPO requirement enabling scaling for all types of advanced CMOS devices production. The main driver of On-Device-Overlay (ODO) measurement at AEI step is the see-through imaging capability to see all relevant layers through the stack even though the measurement step/time differs on the same wafer of the ADI optical overlay measurement are ranging from few to two-digit days depending on the process complexity. There has been an increasing need for a faster response of overlay measurements to close the overlay control loop and breakdown the device to target error versus the process overly induce component – in other words, to correct in the right step. This leads to the necessity of SEM ADI overlay measurement. With the recent e-Beam evolution of more higher landing energy, probe current and improved Total Measurement Uncertainty (TMU) performance, SEM ADI overlay measurement is enabled and considered to show the performances to meet market requirements on the selected layers of interest. In this paper, we would like to demonstrate the enablement of SEM ADI overlay measurement including the accuracy comparison with OM ADI overlay on the DBO scribe target versus real device pattern measurement performance. With SEM ADI and AEI overlay measurement on the same patterns, we could also demonstrate the error breakdown between optical target to device and from ADI to AEI process induced error which will enable the better correctable methodology to minimize NZO/MRC. In addition, this process contribution to error breakdown could be extended to improve, in the future, the Edge Placement Error (EPE) control.

Proceedings Article | 24 March 2017 Open Access

Open Access

Presentation + Paper

Progress in EUV lithography toward manufacturing

Seong-Sue Kim, Roman Chalykh, Hoyeon Kim, Seungkoo Lee, Changmin Park, Myungsoo Hwang, Joo-On Park, Jinhong Park, Hocheol Kim, Jinho Jeon, Insung Kim, Donggun Lee, Jihoon Na, Jungyeop Kim, Siyong Lee, Hyunwoo Kim, Seok-Woo Nam

Proceedings Volume 10143, 1014306 (2017) https://doi.org/10.1117/12.2264043

KEYWORDS: Extreme ultraviolet lithography, Manufacturing, Extreme ultraviolet, Pellicles, Photomasks, Transmittance, Logic, Scanners, Reticles, Chemical elements

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Proceedings Article | 24 March 2009 Paper

Paper

Sensitivity improvement and noise reduction of array CD mapping on memory device using inspection tool

Jeong-Ho Yeo, Byeong-Ok Cho, Jin-Hong Park, Jinseok Hur, Seok-Hoon Woo, Seungwoon Choi, Chan-Hoon Park

Proceedings Volume 7272, 72721U (2009) https://doi.org/10.1117/12.814024

KEYWORDS: Critical dimension metrology, Polarization, Semiconducting wafers, Inspection, Reflectivity, Silicon, Calibration, Process control, Denoising, Associative arrays

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Proceedings Article | 23 March 2009 Paper

Paper

Fast mask CD uniformity measurement using zero order diffraction from memory array pattern

Jinseok Heo, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Proceedings Volume 7272, 72721S (2009) https://doi.org/10.1117/12.813995

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Critical dimension metrology, Error analysis, Diffraction, Scanners, Printing, Fiber optic illuminators, Charge-coupled devices

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Proceedings Article | 18 March 2009 Paper

Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Proceedings Volume 7271, 727142 (2009) https://doi.org/10.1117/12.813996

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical proximity correction, Reflectivity, Scanners, Critical dimension metrology, EUV optics, Optical calibration, Cadmium

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Proceedings Article | 18 March 2009 Paper

Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

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Proceedings Article | 4 December 2008 Paper

Paper

Methodology of flare modeling and compensation in EUVL

Insung Kim, Hoyoung Kang, Changmin Park, Joo-On Park, Jeonghoon Lee, Jinhong Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woosung Han

Proceedings Volume 7140, 714009 (2008) https://doi.org/10.1117/12.804673

KEYWORDS: Point spread functions, Fractal analysis, Extreme ultraviolet, Lithography, Optical proximity correction, Photomasks, Critical dimension metrology, Modulation transfer functions, Convolution, Cadmium

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Proceedings Article | 21 March 2007 Paper

Paper

Properties of EUVL masks as a function of capping layer and absorber stack structures

Hwan-Seok Seo, Jinhong Park, Seung-Yoon Lee, Joo-On Park, Hun Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 6517, 65171G (2007) https://doi.org/10.1117/12.713301

KEYWORDS: Reflectivity, Silicon, Ruthenium, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Molybdenum, Multilayers, Refractive index, Ion beams

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Proceedings Article | 20 March 2007 Paper

Paper

The effect of localized mask density variations on image quality in EUV lithography

Jinhong Park, Hwanseok Seo, Seong-Sue Kim, HanKu Cho, Joo-Tae Moon

Proceedings Volume 6517, 651723 (2007) https://doi.org/10.1117/12.713303

KEYWORDS: Stray light, Photomasks, Image quality, Light scattering, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Reticles, Lithography, Reflectivity

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Proceedings Article | 20 May 2006 Paper

Paper

Simulation and experiments for inspection properties of EUV mask defects

Jinhong Park, Seong-Sue Kim, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6283, 62833E (2006) https://doi.org/10.1117/12.681833

KEYWORDS: Inspection, Photomasks, Confocal microscopy, Extreme ultraviolet, Semiconducting wafers, Reflectivity, Defect detection, Deep ultraviolet, Visible radiation, Imaging systems

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Proceedings Article | 23 March 2006 Paper

Paper

Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment

Seong-Sue Kim, Jinhong Park, Roman Chalykh, Jiehun Kang, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6151, 61511C (2006) https://doi.org/10.1117/12.656221

KEYWORDS: Confocal microscopy, Photomasks, Extreme ultraviolet, Smoothing, Defect inspection, Microscopes, Data modeling, Molybdenum, Silicon, Extreme ultraviolet lithography

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Proceedings Article | 28 June 2005 Paper

Paper

Process monitoring system for instant defect detection and analysis in 65 nm node photomask fabrications

Young-Seok Cho, Jin-Hyung Park, Won-Il Cho, Jin-Hong Park, Yong-Hyun Kim, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617126

KEYWORDS: Inspection, Photomasks, Image processing, Etching, Defect detection, Signal processing, Particles, Signal detection, Manufacturing, Contamination

Read Abstract +

Proceedings Article | 10 May 2005 Paper

Paper

Repair simulation with image processing and artificial intelligence

Yo-Han Choi, Moon-Kyu Sung, Sang-Hyun Lee, Ji-Hyung Lee, Jin-Hong Park, Ji-Hyun Choi, Seong-Yong Moon, Sung-Woon Choi, Woo-Sung Han

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599369

KEYWORDS: Neural networks, Neurons, Optical simulations, Image segmentation, Quartz, Edge detection, Artificial intelligence, Photomasks, Inspection, Image processing

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Proceedings Article | 27 January 2005 Paper

Paper

The study on causes and control methods of haze contamination

Sung-Jae Han, Bo-Hye Kim, Jin-Hong Park, Yong-Hoon Kim, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.576605

KEYWORDS: Air contamination, Photomasks, Contamination, Ions, Manufacturing, Carbon, Sulfur, Lithography, Inspection, Optical lithography

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Proceedings Article | 28 May 2004 Paper

Paper

Layer-specific illumination for low k1 periodic and semiperiodic DRAM cell patterns: design procedure and application

Chan Hwang, Dong-Seok Nam, Jin-Hong Park, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536362

KEYWORDS: Optical lithography, Genetic algorithms, Computing systems, Computer simulations, Optimization (mathematics), Image enhancement, Resolution enhancement technologies, Optical resolution, Light sources, Optical proximity correction

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Proceedings Article | 17 December 2003 Paper

Paper

Dose-modulation-induced mask CD error on simultaneous correction of fogging and loading effect

Hojune Lee, Seung-Hune Yang, Jin-Hong Park, Seong-Yong Moon, Seong-Woon Choi, Jung-Min Sohn

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518283

KEYWORDS: Monte Carlo methods, Modulation, Etching, Critical dimension metrology, Photomasks, Scattering, Dry etching, Lithography, Cadmium, Error analysis

Read Abstract +

Proceedings Article | 4 June 2003 Paper

Paper

Parallel processing optical device using volume holography

Seunghoon Han, Bong-Ahn Yu, Hwi Kim, Jinhong Park, Jung Paek, Byoungho Lee

Proceedings Volume 5005, (2003) https://doi.org/10.1117/12.473957

KEYWORDS: Diffraction gratings, Diffraction, Crystals, Demultiplexers, Fiber Bragg gratings, Volume holography, Multiplexing, Optical components, Dielectric polarization, Polarization

Read Abstract +

Proceedings Article | 20 November 2002 Paper

Paper

Shaping reference beam with specified spatial correlation for hologram multiplexing by use of nonparaxial diffractive optical element

Hwi Kim, Byungchoon Yang, Jinhong Park, Byoungho Lee

Proceedings Volume 4803, (2002) https://doi.org/10.1117/12.452630

KEYWORDS: Diffractive optical elements, Holograms, Multiplexing, Holography, Inverse optics, Optical design, Fourier transforms, Glasses, Apodization, Volume holography

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Proceedings Article | 20 November 2002 Paper

Paper

Formation of multiple gratings in a photorefractive crystal using a single diffractive mask

Seunghoon Han, Jinhong Park, Hwi Kim, Byungchoon Yang, Jung Paek, Byoungho Lee

Proceedings Volume 4803, (2002) https://doi.org/10.1117/12.452632

KEYWORDS: Fiber Bragg gratings, Diffraction, Crystals, Diffraction gratings, Spatial frequencies, Photomasks, Multiplexing, Holograms, Optical components, Phase matching

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Proceedings Article | 3 June 2002 Paper

Paper

Optimal design of boundary-modulated diffractive optical elements for general beam shaping

Hwi Kim, Byungchoon Yang, Jinhong Park, Byoungho Lee

Proceedings Volume 4659, (2002) https://doi.org/10.1117/12.469259

KEYWORDS: Diffractive optical elements, Modulation, Optical design, Diffraction, Phase shift keying, Fourier transforms, Spiral phase plates, Image processing, Image transmission, Beam shaping

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Proceedings Article | 23 January 2002 Paper

Paper

Recording and retrieving of multiplexed near-field holograms

Byoungho Lee, Kyoung-Youm Kim, Jingu Kang, Jinhong Park

Proceedings Volume 4459, (2002) https://doi.org/10.1117/12.454014

KEYWORDS: Crystals, Near field, Near field scanning optical microscopy, Holograms, Multiplexing, Holography, Optical storage, Laser crystals, Near field optics, Semiconducting wafers

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Proceedings Article | 22 January 2001 Paper

Paper

Improved process control of photomask fabrication in e-beam lithography

Byung-Cheol Cha, Jin-Hong Park, Yo-Han Choi, Jin-Min Kim, Woo-Sung Han, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410730

KEYWORDS: Photomasks, Critical dimension metrology, Electron beam lithography, Process control, Scattering, Control systems, Dry etching, Lithography, Semiconductors, Electronics

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Proceedings Article | 25 August 1999 Paper

Paper

Evaluation of the attenuated PSM performance as the shifter transmittance and illumination systems

Yong-Hoon Kim, JoHyun Park, Jin-Hong Park, Kyung Lee, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360214

KEYWORDS: Transmittance, Lithography, Photomasks, Deep ultraviolet, Lithographic illumination, Semiconducting wafers, Critical dimension metrology, Resolution enhancement technologies, Binary data, Optical proximity correction

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Proceedings Article | 1 September 1998 Paper

Paper

Parameters affecting megasonic power transmittance in the megasonic cleaning process

Yong-Hoon Kim, Jin-Hong Park, Keumhee Lee, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328852

KEYWORDS: Wave plates, Liquids, Transmittance, Particles, Photomasks, Wave propagation, Semiconducting wafers, Transducers, Ultrasonics, Temperature metrology

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Proceedings Article | 27 December 1996 Paper

Paper

Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle

Yonghoon Kim, Jin-Hong Park, Kyung Lee, Hanku Cho, Hee-Sun Yoon

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262840

KEYWORDS: Reticles, Optical proximity correction, Semiconducting wafers, Defect inspection, Defect detection, Inspection, Photomasks, Optical lithography, Tolerancing, Imaging systems

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Proceedings Article | 27 December 1996 Paper

Paper

FIB repair of opaque defects for 64-Mb-DRAM-level binary masks

Kyung Lee, Hanku Cho, Jin-Hong Park, Yonghoon Kim, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262830

KEYWORDS: Photomasks, Opacity, Semiconducting wafers, Glasses, Binary data, Gallium, Optical lithography, Optical simulations, Ions, Defect detection

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Proceedings Article | 24 July 1996 Paper

Paper

Detectability and printability of programmed defect reticle for 256-Mb DRAM

Jin-Hong Park, Hanku Cho, Yonghoon Kim, Kyung Lee, Hee-Sun Yoon

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245223

KEYWORDS: Reticles, Semiconducting wafers, Defect inspection, Defect detection, Photomasks, Inspection, Optical lithography, Imaging systems, Manufacturing, Deep ultraviolet

Read Abstract +

Showing 5 of 29 publications

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