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Kunhe Lv
at Beijing Univ. of Posts and Telecommunications
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Publications (1)
Proceedings Article | 1 December 2011 Paper
First-principles calculations of band-gap properties of zinc-blende BxGa1-xN and BxGa1-xNyAs1-y alloys
Kun-He Lv, Qi Wang, Ying-Ce Yan, Xin Guo, Yong-Qing Huang, Xiao-Min Ren
Proceedings Volume 8198, 819807 (2011) https://doi.org/10.1117/12.921316
KEYWORDS: Boron, Gallium nitride, Gallium, Silicon, Nitrogen, Gallium arsenide, Group III-V semiconductors, Optoelectronic devices, Barium, Photonics
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