A compact and broadband polarization beam splitter (PBS) based on silicon (Si) nitride (SiN)-on-Si-on-insulator multilayer platform with vertical asymmetrical directional coupler (ADC) is designed and analyzed. The vertical ADC is consisted of two waveguides, which are placed in the bottom Si layer and upper SiN layer separately. It is found that by properly choosing the values of the structure parameters, especially taking advantages of the extra freedom of the relative location between these two waveguides, the performance of the PBS can be significantly improved. By incorporating tapered structures into the coupling region in the further step, bandwidth of 294 nm, which is determined by the insertion loss of <1 dB and the extinction ratio of >20 dB in both polarizations, is realized within a coupling length as compact as 6.9 μm. The proposed device has a good potential to be applied in three-dimensional photonic integration, where higher integration density or more on-chip functions can be realized.
We present a wavelength multiplexing and polarization multiplexing device assisted by subwavelength grating (SWG), implemented on a 300-nm-tall silicon nitride (SiN) platform. The multiplexing device consists of three SiN waveguides- WG1, WG2 and WG3. The bridging waveguide WG2 between WG1 and output waveguide WG3 is designed into SWG structure, which executes the mode coupling thus multiplexing functions according to the principle of phase matching. The results are as follows: for wavelength multiplexing, the insertion loss (IL) is 0.54 dB and 0.58 dB at the center wavelength of O-band and C-band, which is 1310 nm and 1550 nm, respectively. The crosstalk (CT) is -12.5 dB and -23 dB at these two wavelength. The 1-dB bandwidth is larger than 170 nm for both bands. For polarization multiplexing, the IL is 0.44 dB and 0.64 dB at the wavelength of 1310 nm and 1550 nm, with the crosstalk lower than -16.2 dB and -22.8 dB. The 1-dB bandwidth is larger than 180 nm for the two bands.
Silicon nitride (SiN) is an ideal material which is compatible with complementary metal-oxide-semiconductor (CMOS) technology. Its advantages include suitability for high power handing, a large spectral range and low thermo-optic coefficient, etc. A polarization beam splitter (PBS) is one of the significant polarization handling devices for integrated silicon photonic circuits. In this paper, a low insertion loss (IL), broadband and high extinction ratio (ER) PBS with a compact coupling length of 6 μm based on an asymmetrical directional coupler (ADC) was proposed. It consists of a fully-etched silicon (Si) strip waveguide and a silicon nitride (Si3N4) strip waveguide with a vertical gap of 100 nm. By carefully optimizing the parameters, the input transverse magnetic (TM) mode polarization from the Si waveguide will couple to the Si3N4 waveguide due to the phase matching, while the input transverse electric (TE) mode polarization will keep propagating in the silicon waveguide due to the large refractive index difference between the two waveguides. For the TE polarization mode, the simulation results show that the IL is less than 0.23 dB and the ER is higher than 56 dB in the wavelength range of 1300-1900 nm. For the TM polarization mode, the numerical results show that the IL is less than 1 dB and the ER is higher than 12 dB in the wavelength range of 1424-1712 nm. Meanwhile, our design also has high fabrication tolerance and is suitable for production on
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