Mr. Li-Cheng Chang Profile

Li-Cheng Chang

at National Taiwan Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 16 February 2017 Presentation + Paper

Investigation of GaN Fin-HEMTs with micron-scale fin width

Li-Cheng Chang, Ming Yang, Yi-Hong Jiang, Chao-Hsin Wu

Proceedings Volume 10104, 101041F (2017) https://doi.org/10.1117/12.2257211

KEYWORDS: Gallium nitride, Electronics, Semiconductors, Field effect transistors, Temperature metrology, Modulation, Scanning electron microscopy

Read Abstract +

In this paper, we utilize the fin-shaped channel to form the AlGaN/GaN HEMTs which can be considered as “Fin- HEMTs” to adjust the threshold voltage (V_TH) toward positive value. The gate metal here is deposited directly on the AlGaN/GaN semiconductor to form the Schottky contact. Although the fin-widths are in the level of micron-scale, the shifts of VTH are still observable and the V_TH becomes more positive with the smaller fin width. This is attributed to the assistant of the side-gate control which can be regarded as the depletion layer formed by Schottky contact at side-gate will deplete the 2DEG in the channel. Therefore, with the smaller fin width, the channel can be pinched off faster which is similar to the double gate MESFETs. The V_TH of planar device is shifted from -3.81 V to -3.37 V with 2-μm-fin-width. On the other hand, unlike to carrier transportation in the conventional FinFET with nano-scale fin width which is dominated by the surface scattering, our Fin-HEMTs with micron-scale fin width exhibit higher drain current than planar device and this is because of the smaller thermal resistance (R_TH) for the fin-HEMT. We extract the R_TH by varying the measured temperature and the R_TH of the device with 4-μm-fin-width and planar device is 58.5 K/W and 249.5 K/W, respectively.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years