Vanadium oxide thin films fabricated by reactive magnetron sputtering were annealed in N2/H2 ambience for 1, 3, 5 and
7 hours at 450°C. Changes in electrical & structural properties and chemical composition were studied. From R-T
measurement and calculation, it was found that both square resistance(R) and temperature coefficient of resistance(TCR)
of the films increased after annealing. Atomic force microscopy(AFM) analysis revealed that both grain size and surface
roughness were aggrandized greatly after annealing. X-ray diffraction(XRD) analysis showed that new phases V2O5(0 0
1) and VO2(0 1 1) appeared in the annealed films and the grain size varied between 10~40nm. X-ray photo-electronic
spectrum(XPS) analysis demonstrated variations in depth of the atomic ratios of O:V and the vanadium valence states
distribution for different time annealed films. Following the above analysis, correlation between macroscopic and
microscopic characteristics of the films is elaborated.
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