Laser as a high energy density light source and silicon cell as a widely used photoelectric conversion element, the interaction between the two has become a research hotspot in wireless energy transmission and semiconductor material damage. At present, the experimental and theoretical research mainly focuses on the damage threshold and morphology, electrical output characteristics and action mechanism. The resistance of the silicon cell affecting electrical output was mainly qualitative analysis, but few quantitative studies. Different degrees of damage were simulated though pulsed laser irradiation in different positions of the silicon cell. The parallel resistance and series resistance of the silicon cell were estimated by linear fitting at V0 and I0 of IV curve, and the variation of the resistances was quantitatively obtained under different degrees damage. The results show that the damage induced by pulsed laser irradiation is obvious melting ablation and the damage is irreversible when the optical power density is 3.3×108W / cm2 , one pulse irradiation damage is equivalent to the resistances of 67 in parallel and 189 m in series for silicon cell, the output voltage decreases approximately linearly with the increase of irradiation times and the output voltage is about half of the initial voltage after 6 times irradiation. In addition, the output voltage was rapidly increased to a peak with the loading of pulsed laser, which is almost independent of the damage of the silicon cell.
In order to study the disturbing effect of pulsed laser irradiation on array CCD camera, experiment of CCD camera disturbed by single pulse laser was carried out at short-distance. A 1064nm laser was chosen as the irradiation source, which was attenuated by attenuation pieces before entering the CCD lens. An aperture was set before CCD lens to limit spot size to radius of 2.5mm. 50% laser was split for monitoring the laser stability and the other 50% entered CCD camera. The entering laser energy was started with 2.48 nano Joule, and CCD camera was in normal work condition; along with the increase of laser pulse energy, saturated pixels came out in the image plane, and saturated zone increased at the same time. With the laser pulse energy increasing to 47.1 nano Joule, a short crosstalk line appeared above the main spot, and there was a certain distance between them. With increasing of laser pulse energy, distance between crosstalk line and main spot reduced and the crosstalk line became lighter and thicker, a shorter horizontal crosstalk in the middle of longitudinal crosstalk line became obvious at the same time. The experimental results has some differences between the gap on crosstalk line and unilateral crosstalk line, which provides some new experimental data for analysing disturbing effect of laser irradiation on array CCD.
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