It’s generally said that the management of particles is important. In DUV lithography, it’s needed to remove particles on photomask surface not to induce patterning defects on wafer. Moreover, in Nanoimprint lithography (NIL), particles on template cause not only patterning defects on wafer but also its own pattern collapse. Therefore, these particles have to be entirely removed from substrate surface with cleaning technology. In this paper, we proposed ‘Freeze Cleaning’ which has more than 99% PRE for 40nm SiN standard nanoparticle without pattern collapse and critical dimension (CD) shift. And it was also demonstrated that soft defects on template which remained after conv. cleaning could be removed with Freeze Cleaning. These results predict that Freeze Cleaning will contribute to progress of photomask and template technology to next stage.
UV nano imprint lithography (UV-NIL) has high-throughput and cost-effective for complex nano-scale patterns and is
considered as a candidate for next generation lithography tool. In addition, NIL is the unmagnified lithography and
contact transfer technique using template. Therefore, the lithography performance depends greatly on the quality of the
template pattern.
According to ITRS 2013, the minimum half pitch size of Line and Space (LS) pattern will reach 1x nm level within
next five years. On the other hand, in hole pattern, half pith of 2x nm level will be required in five years. Pattern shrink
rate of hole pattern size is slower than LS pattern, but shot counts increase explosively compared to LS pattern due to its
data volume. Therefore, high throughput and high resolution EB lithography process is required.
In previous study, we reported the result of hole patterning on master template which has high resolution resist
material and etching process. This study indicated the potential for fabricating 2xnm hole master template [1].
After above study, we aim at fabricating the good quality of 2xnm master template which is assured about defect, CD
uniformity(CDU), and Image placement(IP). To product high quality master template, we develop not only high
resolution patterning process but also high accuracy quality assurance technology. We report the development progress
about hole master template production.
Nano imprint lithography (NIL) is one to one lithography and contact transfer technique using template. Therefore, the lithography performance depends greatly on the quality of the template pattern. In this study, we investigated the resolution and the defect level for hole patterning using chemical amplified resists (CAR) and VSB type EB writer, EBM9000. To form smaller pattern with high quality, high resolution resist process and high sensitivity etching process are needed. After these elements were optimized, we succeeded to form 24 nm dense hole pattern on template. In general, it is difficult to suppress the defect density in a large area because of fogging effect and process loading and so forth. However, from the view point of defect quality, 26 nm hole pattern is achieved to form with practical level in a large area. Therefore, we indicate the capability of forming 26 nm hole master template which will be required in 2019 from ITRS2013. These results show that this process is possible to obtain less than 30 nm hole pattern without enormous writing time. As future work, we will imprint master to replica template and check the printability.
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