This paper investigates the evolving landscape of Vertical Cavity Surface Emitting Lasers (VCSELs) in consumer and optical communication technologies. With Apple's GaAs-based VCSEL adoption for facial recognition and augmented reality, the industry has seen leaders like Lumentum and Coherent shape the GaAs VCSEL market. A new entrant, Sony, into Apple's supply chain resulted in market share lose where it reached more than 50% for Lumentum and Coherent in their consumer 3D sensing business. The surge in demand for higher data rate 100G VCSELs for 800G optical transceiver, representing 10% of the total VCSELs expected to be shipped in 2024, for short-reach optical interconnects is mainly driven by AI applications. In addition, we have identified new trends in the VCSELs technology to achieve long-wavelength emission in the range of 13xx nm opening the path for under-display 3D sensing and single mode emission for data communications. With respect to all these facts, Yole group forecasts the VCSELs market to reach $1.4B in 2028 with a CAGR22-28 of 6% driven by consumer and datacom applications.
Research of Yole Intelligence aims to give a comprehensive account of the forces driving the optical interconnects market, technology and industry. We provide macro trend analyses for both datacom and telecom, review the trends in data centers impacting the optical module market and elucidate comprehensive technology analysis of optical transceivers highlighting the trends for application from intra-data centers up to long-haul. Furthermore, evaluation of silicon photonics and InP technology platforms in term of technology and market dynamics is also reported. We analyze market and provide forecasts for revenue and volume of optical transceivers for 2017-2027 split by applications and speeds.
For the past 50 years, mobile bandwidth requirements have evolved from voice calls and texting to ultra-high-definition video and a variety of augmented reality/virtual reality applications. Expanding machine-to-machine applications, such as smart meters, video surveillance, healthcare monitoring, connected drives, and automated logistics, contribute in a major way to device and connection growth and push the expansion of data center infrastructure. The popularity of pluggable modules will continue as they take advantage of 100G single-wavelength optics already proven in 400GbE systems and thus can be technically and cost-effectively implemented in new form factors for 800G modules. However, current form factors will be limited in their ability to support 1.6T and higher capacities in terms of the required electrical and optical densities, thermal issues, and power consumption. As a result of discrete electrical device implementation, power dissipation and thermal management are becoming limiting factors for future pluggable optics. Co-Packaged Optics (CPO) is a new approach that brings the optics and the switch ASIC close together and aims to overcome the challenges. Furthermore, CPO technology is considered a new deployment model of the whole ecosystem and an alternative to pluggable optics. The industry is working on heterogeneous integration of InP lasers directly onto silicon chips enabling scalable integration and elimination of the cost and complexity. Revenue generated by the CPO market reached around $6M in 2020 and is expected to reach $366M in 2026 at a 101% Compound Annual Growth Rate for 2020-2026. This growth is driven by substantial energy (<30%) and capital expenditure ($/Gbps) savings over pluggable optics.
The state of the art of fiber-optic communication technologies has advanced dramatically over the past 25 years. The highest capacity of commercial fiber-optic links available in the 1990s was only 2.5-10 Gb/s while today they can carry up to 800 Gb/s. The last decade of developments have enabled higher efficiency digital communication systems and solved problems with degraded signals. Optical transceivers are widely used in server network cards, switches, routers and wireless base station equipment in a variety of network architectures and applications. The new form factors are increasingly universal and designed to reduce their size and thus power consumption. Inside modules the optics and integrated circuits are getting closer together. Therefore, silicon photonics might represent a key enabling technology for further development of optical interconnect solutions needed to address growing traffic. This technology will play an important role in 500 m – 80 km distance applications. Industry is working on heterogeneous integration of InP lasers directly onto silicon chips. The advantage is scalable integration and elimination of the cost and complexity of the optical package for 400G and beyond. Revenue generated by optical transceivers is expected to more than double to around by 2025 at a compound annual growth rate for 2020-2025 of 15%.
We present the design and implementation of a MEMS pressure sensor with an operation potential under harsh
conditions at high temperatures (T = 300 – 800°C). The sensor consists of a circular HEMT (C-HEMT) integrated on a
circular AlGaN/GaN membrane. In order to realize MEMS for extreme conditions using AlGaN/GaN material system,
two key issues should be solved: (a) realization of MEMS structures by etching of the substrate material and (b)
formation of metallic contacts (both ohmic and Schottky) to be able to withstand high thermal loads. In this design
concept the piezoresistive and piezoelectric effect of AlGaN/GaN heterostructure is used to sense the pressure under
static and/or dynamic conditions. The backside bulk micromachining of our SiC wafer in the first experiment started
with FS-laser ablation down to ~200 -270μm deep holes of 500μm in diameter. Because no additional intermediate layer
can stop the ablation process, the number of laser pulses has to be optimized in order to reach the required ablation
depth. 2D structural-mechanical and piezoelectric analyses were performed to verify the mechanical and piezoelectric
response of the circular membrane pressure sensor to static pressure load (in the range between 20 and 100kPa). We
suggested that suppressing the residual stress in the membrane can improve the sensor response. The parameters of the
same devices previously fabricated on bulk substrates and/or membranes were compared. The maxima of drain currents
of our C-HEMT devices on SiC exhibit more than four times higher values compared to those measured on silicon
substrates.
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