The multi-beam mask writer MBM-3000 has been launched since 2023 for next-generation EUV mask production. It is equipped with 12-nm beamlets and a powerful cathode that brings out a current density of 3.6 A/cm2, in order to achieve better resolution and writing speed than our current writer MBM-2000PLUS. New optics with a next-generation blanking aperture array (BAA) is installed to have a 2X beam count. A data generation system has a 2X speed so that it can handle layouts of next-generation EUV masks without a data processing overhead. The writing accuracy and throughput improvements of the MBM-3000 have been confirmed not only in the in-house process, but also at several customers’ sites.
The multi-beam mask writer MBM-3000, where beam current density increases to 3.6A/cm2, the beam count doubles for faster writing speed, and beam size decreases from 16nm to 12nm for higher resolution, has been released since 2023 to support the N2 device technology node. We developed not only the optics with improved writing accuracy for reduction in the Coulomb interaction effects but also a new data path, and moreover introduced a new data format MBF2.1 for efficient handling of curve data. Writing time of MBM-3000 now becomes 10.5 hours when exposure dose is 200 μC/cm2. Consequently, the system grows in power compared with previous series including MBM-2000 PLUS.
The multi-beam mask writer MBM-3000 designed to achieve N2 device technology node was released. The key concepts of the MBM-3000 are compatible with better resolution and faster throughput than our current multi-beam writer MBM- 2000PLUS. In order to reach these objective, the MBM-3000 is equipped with 12-nm beamlets, a single powerful electron source, a new optics design and enhanced data path systems. The smaller beamlets produce improved resolution and decreased productivity. However, the powerful cathode, which outputs a beam current density of 3.6A/cm2, prevent declined throughput. The new optics systems and enhanced data path support both the better resolution and the throughput.
The multi-beam mask writer MBM-3000 is launched in 2023 for next generation EUV mask production. It is equipped with 12-nm beamlets and a powerful cathode that brings out a beam current density of 3.6 A/cm2, in order to achieve higher resolution and faster writing speed than our current writer MBM-2000PLUS. New optics with a next-generation blanking aperture array (BAA) is installed in order to double the beam count. The optics is designed to reduce the Coulomb interaction effects. It is equipped with aberration correctors to reduce image field distortion and other types of aberrations to obtain the best beam performance. Patterning resolution is improved by these measures. Writing tests confirmed that the MBM-3000, which uses a 1.5X larger beam current than the MBM-2000, simultaneously enhances both resolution and throughput.
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