In this paper, we report our research work on the application of the pulsed-laser-induced disordering (P-LID) technique in InGaAs/InGaAsP MQW waveguide photodetector. A Q-switched Nd-YAG laser with wavelength of 1.064 micrometers was used to irradiate on the InGaAs/InGaAsP quantum well materials, annealing process at 625 degree(s)C for 120s was followed. A maximum bandgap shift of up to 112meV has been observed. The variety of photocurrent curves indicated that the cut-off wavelength of the photodetector becomes shorter with increasing of intermixing strength.
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