Extreme ultraviolet (EUV) lithography has already utilized for high volume manufacturing, and miniaturization by numerical aperture (NA) 0.33 is approaching to the limit. Pitch 24 nm line and space (L/S) resist patterns can be resolved with single exposure at even NA 0.33. However, etch transfer performance to underlayer materials is one of the issues. Especially, in narrow pitch case, it is very difficult to etch due to the lack of resist mask resistance. Therefore, resist pattern thickening process with optimized development process and underlayer state was studied and verified the pattern height impact at our past paper. As a result, it found that combination of the underlayer (UL) kinds and their status was one of the key points to lead high-quality patterns. In this paper, optimized stack structure narrow pitch pattern and lithography performance. As a result, in experiments toward High NA EUV, 24 nm pitch L/S pattern could be patterned (near smallest size by NA 0.33) by selecting the optimal ML/UL combination, and some defect free process windows were kept between defect cliffs.
Resolution, line edge roughness (LER) and sensitivity (RLS) and defectivity are the well-known critical issues of extreme ultraviolet (EUV) lithography. To break the RLS triangle, metal oxide resist (MOR) is a promising candidate. However, further improvement of MOR process is required for high volume manufacturing to maintain low defectivity. In this paper, conventional and new processes for MOR pitch 32 nm line and space (L/S) and 36 nm pillar patterns was investigated. This new process was able to perform good sensitivity without degrading roughness. In addition, further optimization for underlayer and developer process could mitigate pattern collapses. MOR treatment was evaluated as another technique for roughness improvement. At last, bottom scum defect would be reduced by new process.
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