Dr. Naresh Chand Profile

Dr. Naresh Chand

Director at Huawei Technologies Co Ltd

SPIE Involvement:

Author

Proceedings Article | 19 August 2008 Paper

A comparative study of 2.667 Gb/s OOK, DPSK, and PPM modulation formats for FSO applications

Naresh Chand, Andrew Hunton, Bruce Eteson

Proceedings Volume 7091, 70910G (2008) https://doi.org/10.1117/12.797869

KEYWORDS: Receivers, Free space optics, Modulation, Avalanche photodetectors, Computer programming, Phase shift keying, Free space optical communications, Data communications, Eye, Satellites

Read Abstract +

Proceedings Article | 13 September 2005 Paper

Performance comparison of NRZ and RZ modulations with and without forward error corrections for free-space optical communication

Naresh Chand, John Loriz, Andrew Hunton, Bruce Eteson

Proceedings Volume 5892, 58920U (2005) https://doi.org/10.1117/12.621393

KEYWORDS: Forward error correction, Free space optics, Receivers, Computer programming, Single mode fibers, Modulation, Avalanche photodetectors, Free space optical communications, Clocks, Multimode fibers

Read Abstract +

Proceedings Article | 28 April 1999 Paper

System for delivery of broadcast digital video as an overlay to baseband switched services on a fiber-to-the-home access network

Naresh Chand, Peter Magill, Venkat Swaminathan, R. Yadvish

Proceedings Volume 3666, (1999) https://doi.org/10.1117/12.347955

KEYWORDS: Video, Receivers, Fused deposition modeling, Time division multiplexing, Signal to noise ratio, PIN photodiodes, Modulation, Avalanche photodetectors, Fiber to the x, Transmitters

Read Abstract +

Proceedings Article | 15 January 1996 Paper

High-reliability nonhermetic 1.3-um InP-based uncooled lasers

Naresh Chand, John Osenbach, T. Evanosky, Robert Comizzoli, Won-Tien Tsang

Proceedings Volume 2610, (1996) https://doi.org/10.1117/12.230091

KEYWORDS: Water, Reliability, Oxygen, Humidity, Refractive index, Silicon, Semiconductor lasers, Dielectrics, Absorption, Reflectivity

Read Abstract +

We report the first uncooled non-hermetic 1.3 micrometer InP-based communication lasers that have reliability comparable to their hermetically packaged counterparts for possible applications in fiber in the loop and cable TV. The development of reliable non-hermetic semiconductor lasers would not only lead to the elimination of the costs specifically associated with hermetic packaging but also lead the way for possible revolutionary low cost optoelectronic packaging technologies. We have used Fabry-Perot capped mesa buried heterostructure (CMBH) uncooled lasers with both bulk and MQW active regions grown on n- type InP substrates by VPE and MOCVD. We find that the proper dielectric facet passivation is the key to obtain high reliability in a non-hermetic environment. The passivation protects the laser from the ambient and maintains the proper facet reflectivity to achieve desired laser characteristics. The SiO facet passivation formed by molecular beam deposition (MBD) has resulted in lasers with lifetime well in excess of the reliability goal of 3,000 hours operation at 85 degrees Celsius/90% RH/30 mA aging condition. Based on extrapolations derived experimentally, we calculate a 15 year average device hazard rate of less than 300 FITs (as against the desired 1,500 FITs) for the combination of thermal and humidity induced degradation at an ambient condition of 45 degrees Celsius/50% RH. For comparison, the average hazard rate at 45 degrees Celsius and 15 years of service is approximately 250 FITs for hermetic lasers of similar construction. A comparison of the thermal only degradation (hermetic) to the thermal plus humidity induced degradation (non-hermetic) indicates that the reliability of these nonhermetic lasers is controlled by thermal degradation only and not by moisture-induced degradation. In addition to device passivation for a non-hermetic environment, MBD-SiO maintains the optical, electrical and mechanical properties needed for high-performance laser systems.

Proceedings Article | 15 January 1996 Paper

Demonstration of highly reliable nonhermetic planar InGaAs/InP photodiodes

John Osenbach, T. Evanosky, Suniel Phatak, Robert Comizzoli, Naresh Chand

Proceedings Volume 2610, (1996) https://doi.org/10.1117/12.230075

KEYWORDS: Photodiodes, Humidity, Diodes, Reliability, Telecommunications, Semiconductors, Optoelectronics, Fiber to the x, Design for manufacturability, Manufacturing

Read Abstract +

Proceedings Article | 1 June 1994 Paper

Characterization of strained quantum well InGaAs/AlGaAs buried heterostructure lasers using internal second-harmonic generation

Vladimir Iacovlev, Anatol Lupu, Alexei Syrbou, Grigore Suruceanu, I. Kravetsky, Leonid Culiuc, Naresh Chand

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176641

KEYWORDS: Semiconductor lasers, Near field, Quantum wells, Signal detection, Radiation effects, Waveguides, Heterojunctions, Second-harmonic generation, Switching, Near field optics

Read Abstract +

Proceedings Article | 19 November 1993 Paper

Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces

Naresh Chand, Niloy Dutta, Sung-Nee Chu, Alexei Syrbou, Alexandru Mereutza, Vladimir Iacovlev

Proceedings Volume 1985, (1993) https://doi.org/10.1117/12.162735

KEYWORDS: Semiconductor lasers, Interfaces, Etching, Laser damage threshold, Quantum wells, Heterojunctions, Molecular beam epitaxy, Liquid phase epitaxy, Waveguides, Continuous wave operation

Read Abstract +

Proceedings Article | 2 September 1992 Paper

MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers

Naresh Chand, Niloy Dutta, John Lopata, Robert Hull, Michael Geva

Proceedings Volume 1676, (1992) https://doi.org/10.1117/12.137654

KEYWORDS: Quantum wells, Gallium arsenide, Aluminum, Oxygen, Superlattices, Laser damage threshold, Waveguide lasers, Semiconductor lasers, Temperature metrology, Cladding

Read Abstract +

Proceedings Article | 26 June 1992 Paper

(InAs)1/(GaAs)4 superlattices strained quantum-well lasers

Naresh Chand, Niloy Dutta, John Lopata

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59168

KEYWORDS: Superlattices, Semiconductor lasers, Quantum wells, Laser damage threshold, Semiconducting wafers, Surface plasmons, External quantum efficiency, Quantum efficiency, Gallium arsenide, Waveguide lasers

Read Abstract +

Proceedings Article | 1 February 1992 Paper

Fabrication, performance, and reliability of strained InGaAs QW lasers

Naresh Chand, Niloy Dutta, Sung-Nee Chu, William Hobson, John Lopata, R. Wetzel

Proceedings Volume 1580, (1992) https://doi.org/10.1117/12.135364

KEYWORDS: Quantum wells, Indium gallium arsenide, Gallium arsenide, Reliability, GRIN lenses, Fiber lasers, Cladding, Beryllium, Semiconductor lasers, Quantum efficiency

Read Abstract +

Proceedings Article | 1 October 1990 Paper

Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE

Naresh Chand, Sung-Nee Chu, Jan van der Ziel

Proceedings Volume 1285, (1990) https://doi.org/10.1117/12.20820

KEYWORDS: Gallium arsenide, Silicon, Annealing, Optical lithography, Laser sintering, Semiconductors, Thin films, Crystals, Metals, Semiconductor lasers

Read Abstract +

Showing 5 of 11 publications

Conference Committee Involvement (7)

Free-Space and Atmospheric Laser Communications XI

24 August 2011 | San Diego, California, United States

Free-Space Laser Communications X

2 August 2010 | San Diego, California, United States

Free-Space Laser Communications IX

2 August 2009 | San Diego, California, United States

Free-Space Laser Communications VIII

10 August 2008 | San Diego, California, United States

Free-Space Laser Communications VII

28 August 2007 | San Diego, California, United States

Showing 5 of 7 Conference Committees

Keywords/Phrases

Search In:

Publication Years