Dr. Oseo Park Profile

Dr. Oseo Park

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 17 April 2020 Presentation + Paper

Dual tone sub-resolution assist features to improve corner rounding

Cheng Chi, Hao Tang, Oseo Park, Jing Xue, Jing Guo, Geng Han, Charlie King, Jeff Shearer, Sean Burns

Proceedings Volume 11327, 113270E (2020) https://doi.org/10.1117/12.2550834

KEYWORDS: SRAF, Photomasks, Semiconducting wafers, Optical proximity correction, Data modeling, Yield improvement, Optics manufacturing, Optical lithography, Deep ultraviolet, Logic

Read Abstract +

SPIE Journal Paper | 7 February 2017

Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Kafai Lai, Chi-Chun Liu, Hsinyu Tsai, Yongan Xu, Cheng Chi, Ananthan Raghunathan, Parul Dhagat, Lin Hu, Oseo Park, Sunggon Jung, Wooyong Cho, Jaime Morillo, Jed Pitera, Kristin Schmidt, Mike Guillorn, Markus Brink, Daniel Sanders, Nelson Felix, Todd Bailey, Matthew Colburn

JM3, Vol. 16, Issue 01, 013502, (February 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.1.013502

KEYWORDS: Directed self assembly, Resolution enhancement technologies, Lithography, Metals, Optical lithography, Photomasks, 3D modeling, Computational lithography, Optical proximity correction

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Improvements in accuracy of dense OPC models

Chidam Kallingal, James Oberschmidt, Ramya Viswanathan, Amr Abdo, OSeo Park

Proceedings Volume 7122, 71221Q (2008) https://doi.org/10.1117/12.801695

KEYWORDS: Optical proximity correction, Diffusion, Data modeling, Optimization (mathematics), Calibration, Critical dimension metrology, Cadmium, Semiconducting wafers, Model-based design, Photoresist processing

Read Abstract +

Proceedings Article | 26 March 2007 Paper

Impact of mask error on OPC for 45-nm node

Oseo Park

Proceedings Volume 6520, 65203Q (2007) https://doi.org/10.1117/12.712197

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Data modeling, Performance modeling, Phase shifts, Reticles, Lithography, Dry etching, Semiconducting wafers

Read Abstract +

As critical dimensions (CDs) approach (lambda) /two, the use of optical proximity correction (OPC) relies heavily on the ability of the mask vendor to resolve the OPC structures consistently. When an OPC model is generated the reticle and wafer-processing errors are merged, quantified, and fit to a theoretical model. The effectiveness of the OPC model depends greatly on model fit and therefore consistency in the reticle and wafer processing. Variations in either process can 'break' the model resulting in the wrong corrections being applied. Reticle manufacturing variables that effect OPC models are exposure tool resolution, etch process effects, and process push (pre-bias of the fractured data). Most of the errors from these reticle-manufacturing variables are seen during model generation, but there are some regions that are not, and fail to be accounted for such as extremes in the line ends. Since these extreme regions of the mask containing the OPC have a higher mask error enhancement factor (MEEF) than that of the rest of the mask, controlling mask-induced variables is even more important. The phase shift mask (PSM) is one of the most effective approaches to improve ArF lithography performance. MoSi or SiON dry etching technology play an important role to fabricate phase shift masks, such as space bias type Alternating (Alt.) PSM and chrome-less phase shift masks (CPL). The profile of the etched quartz affects the lithography performance. In this paper we evaluate the nominal influences of the MoSi or SiON profiles on pattering and OPC by rigorous electromagnetic field simulations. The influence of the MoSi or SiON profile is investigated by evaluating imaginary masks. In this experiment, we simulated attenuated PSMs with tapered sidewalls, high round and micro-trenches of varying depths. OPC modeling performances of the imaginary masks are measured by the OPC print image CD and model fitting results. I compare the result of print image CD with simulation. I investigate how well the OPC print image CD measurement corresponds to the simulation. Mask CD error and sidewall angle strongly affect the OPC modeling performance. However, micro-trench does not affect the OPC performance. This paper quantifies the effects reticle processing has on the OPC model generation, and also mask CD variations and variable sidewall angles affect the OPC print image CD and OPC model fitting for attenuated PSMs, micro trench depth does not play an important role for OPC print image CD and OPC model fitting.

Proceedings Article | 8 November 2005 Paper

Impact of mask CD error on OPC performance for 65nm technology M1 level

Oseo Park, James Oberschmidt, Wai-Kin Li

Proceedings Volume 5992, 59922Q (2005) https://doi.org/10.1117/12.630758

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Calibration, Distortion, Critical dimension metrology, SRAF, Lithography, Diffusion, Apodization

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Process window simulation study with immersion lithography for 45-nm technology node

Oseo Park, Alois Gutmann, Walter Neumueller, David Back

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.527008

KEYWORDS: Liquids, Phase shifts, Immersion lithography, Photomasks, Refractive index, Optical lithography, Refraction, Lithographic illumination, Lithography, Photoresist materials

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Model-based OPC considering process window aspects: a study

Steffen Schulze, O'Seo Park, Rainer Zimmermann, Ming-Jui Chen, Pat LaCour, Emile Sahouria, Yuri Granik, Nicolas Cobb

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474489

KEYWORDS: Optical proximity correction, Image processing, Process modeling, Lithography, Model-based design, Visualization, Resolution enhancement technologies, Phase shifting, Photomasks, Detection and tracking algorithms

Read Abstract +

Proceedings Article | 5 July 2000 Paper

Integration of attenuated phase-shift mask to 0.13-um technology contact level masking process

Lay Choo, O'Seo Park, Michael Sack, Siu Chung Tam

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388956

KEYWORDS: Photomasks, Phase shifts, Nanoimprint lithography, Scanners, Image transmission, Photomicroscopy, Photoresist materials, Scanning electron microscopy, Optical proximity correction, Photoresist processing

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years