Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally
limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct
band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation
of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One
possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which
can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended
Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed
silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30%
strain can be induced in these microdisks with this approach. The ability to tune the optical performance of
these resonator structures by strain engineering has the potential to enable the development of low threshold
Ge1-xSnx-based lasers on Si.
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