This paper is dedicated to an electronic oscillator designed to control a MEMS (Micro-Electro-Mechanical System) sensor based on a clamped-clamped silicon micro-beam resonator. Due to the high-temperature environment (200°C) and the MEMS specificities, a specific architecture (MRC transimpedance) was implemented in a standard CMOS technology to improve the robustness and to enable the compensation of drifts due to the technologies used for both the sensor and the ASIC. Particular attention is given to the transimpedance first stage of the oscillator. In this paper and after a brief description of the entire oscillator, experimental results are given to demonstrate the capability of the designed ASIC.
This paper is dedicated to a global study of large amplitude effects of electrostatically driven microresonators. Special attention is given to the electrostatic soft spring effect. A theoretical description of the amplitude-induced soft spring effect is given to an electrostatically driven parallel-plate type resonator. A coefficient representing the beam mode shape is introduced, for a clamped-clamped beam resonator. Electrostatic soft spring effect is combined with hard spring effect to highlight the possibility of obtaining a design criteria for compensating the two effects. Hysterisis due to nonlinear forces are addressed, and a critical amplitude is given. A numeric simulator based on MATLAB/Simulink is developed to highlight the electrostatic soft spring effect. Three prototypes with different geometries, which represent each a typical case, are fabricated on an SOI wafer. The design criteria has been compared with measurements obtained with prototypes and experimental results showed good agreements with theory and simulations.
This paper is dedicated to the fabrication and technological aspect of a silicon microresonator sensor. The entire project includes the fabrication processes, the system modelling/simulation, and the electronic interface. The mechanical model of such resonator is presented including description of frequency stability and Hysterises behaviour of the electrostatically driven resonator. Numeric model and FEM simulations are used to simulate the system dynamic
behaviour. The complete fabrication process is based on standard microelectronics technology with specific MEMS technological steps. The key steps are described: micromachining on SOI by Deep Reactive Ion Etching (DRIE), specific release processes to prevent sticking (resist and HF-vapour release process) and collective vacuum encapsulation by Silicon Direct Bonding (SDB). The complete process has been validated and prototypes have been fabricated. The ASIC was designed to interface the sensor and to control the vibration amplitude. This electronic was simulated and designed to work up to 200°C and implemented in a standard 0.6μ CMOS technology. Characterizations of sensor prototypes are done both mechanically and electrostatically. These measurements showed good agreements with theory and FEM simulations.
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