This work demonstrates the high-sensitive terahertz (THz) detector based on topological semimetal platinum telluride (PtTe2). The device shows broad THz frequency (0.1-0.5 THz) detection capability even under the self-driven mode. The thin PtTe2 film is grown by direct tellurization of the sputtered platinum film on the high-resistivity silicon substrate using the chemical vapor deposition (CVD) method. Furthermore, the device exhibits responsivity of 29.2 and 63.1 mA/W at 0.1 and 0.4 THz, respectively, at zero bias voltage. These responsivity values increase to 47 and 82.8 mA/W, respectively, under 200 mV bias voltage. The significant attributes of these devices are the high responsivity, self-driven operation mode, easy fabrication process, and broadband response incurred in the simple device structure.
Infrared photoresponse in large area MoSe2 nanostructured films on flexible substrates has been presented in this work. Nanostructures of MoSe2 have been grown by hydrothermal route using sodium molybdate and selenium (Se) as a precursor in hydrazine and water solution. The process parameters such as ambient pressures and temperature have been optimized to get the nanostructure with superior photosensitivity in IR regime. The adopted synthesis process results in the suspended particles composed of MoSe2 nanostructure, which later transfer in ethanol. This solution has been coated on flexible poly-ethylene terephthalate (PET) substrates for the device fabrication by dip coating. Scanning electron microscopy and high-resolution transmission electron microscopy (HR-TEM) reveals that the as-prepared MoSe2 has particle-like features. The photoresponse of the devices was measured in the wavelength range 1000 nm -1600 nm. As-obtained flexible photodetectors showed responsivity of ~ 2.6 A/W (at 500 mV bias) and rise/fall time 3.9 sec and 2.9 sec under the illumination of 1550 nm. It was also noted that for the small bias voltages, our MoSe2 films possess excellent photoresponse as the at 50 mV bias the responsivity was recorded up to 127 mA/W for 1550 nm light). The simple approach used in this work should facilitate the development of low cost and low power IR photodetectors for next-generation flexible optoelectronics.
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