Semiconductor photodetectors at1550nm wavelengths have been widely used in free space optical communications, sensing, infrared imaging, and quantum information processing. These detectors require high sensitivity with high detection efficiency and a large dynamic range. But for fundamental material and device limits, all these performances cannot be achieved in a single device under the same operating conditions. To overcome this bottleneck, we integrate three coupled gain mechanisms in a single element device, operating below breakdown to obtain a high net gain and at the same time utilize the negative feedback mechanism to minimize the gain fluctuation. This results in an improved signal to noise ratio, which is the key to obtaining a superior sensitivity. Integration of gain mechanisms in an InP-InGaAs device was analytically modeled and experimentally demonstrated.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.