This paper reports the latest device performance of high-power blue and green edge-emitting Laser Diodes (LDs). The epitaxial layers of LDs were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. Fabricated every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A new developed 455 nm blue LD showed the optical output power and the voltage of 5.90 W and 3.81 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 51.6 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 52.4 % at the forward current of 2.2 A. And a new developed 525 nm green LD showed the optical output power and the voltage of 1.86 W and 4.12 V at the forward current of 1.9 A under CW operation. The wall-plug efficiency (WPE) of the 525 nm green LD was 23.8 % at 1.9 A. This is the highest WPE reported so far. The peak WPE of the 525 nm LD was 25.9 % at the forward current of 1.1 A.
This paper reports the latest device performance of high-power blue laser diodes (LDs). The epitaxial structures of LDs were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. The ridge width of the LD was 45 μm. Electrodes of the n-type and p-type were formed at the substrate and the ridge respectively. And the front and rear sides were obtained by cleavage at the m-plane surface. These faces were covered by dielectric mirrors. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.73 W and 3.82 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 50.0 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 51.2 % at the forward current of 2 A.
We demonstrated a room-temperature continuous-wave (CW) operation of the milliwatt-class single-mode blue and green VCSELs with epitaxially grown AlInN/GaN DBRs on c-plane GaN substrates. The emission wavelength and the threshold current of the blue VCSEL were 442.3 nm and 0.40 mA, respectively. The wall plug efficiency of the blue VCSEL was 13.6%, which is the highest value ever reported. Moreover, stable CW operation beyond 1,000 hours has been confirmed under 0.6 mW at 25 °C. Lasing yield in a 2 in. wafer was more than 80 percent at an average threshold current of 1 mA. Furthermore, we also succeeded in providing high performance green VCSELs. The emission wavelength and the threshold current of the green VCSELs were 514.9 nm and 2.8 mA, respectively. The optical output power was over 1.5 mW and the wall plug efficiency achieved 3.7%, which is the best record for GaN-based green VCSELs. These results will enhance the possibility of the practical use of blue and green VCSELs in the near future.
This paper reports the latest device performance of high-power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.67 W and 3.93 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the 455 nm blue LD was 48.1% at 3A. The wall plug efficiency of the high-power blue LD we developed is the highest reported so far. A new developed green LD at 525 nm showed the optical output power of 1.75 W and the wall plug efficiency of 21.2 % at the forward current of 1.9A. The optical output power, the voltage and the wall plug efficiency of a new 532 nm LD showed 1.53 W and 4.35 V, 18.5 % at the forward current of 1.9 A under CW operation. The peak wall plug efficiency of the 532 nm LD was 20 % at the optical output power of 1W.
KEYWORDS: Light sources, Semiconductor lasers, Laser based displays, Gallium nitride, High power lasers, Metalorganic chemical vapor deposition, Indium gallium nitride
We present latest development results of GaN based high power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed blue LD showed the optical output power and the voltage of 5.25 W and 4.03 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the blue LD was 43.4% at 3A. And pure green LDs at 532 nm showed the optical output power of 1.19 W and the wall plug efficiency of 17.1 % at the forward current of 1.6A. Furthermore, 543 nm green LDs were fabricated on C-plane GaN substrates.
We report our recent improvement of watt class blue and green GaN based LDs. These LDs were grown on c-face GaN substrates by metal organic chemical deposition. The laser chip was mounted on the heat sink by the junction down method in TO-ø9 mm package for the suppression of the thermal resistance. The optical output power of 455nm blue LDs was obtained above 4.7 W at injection current of 3A. The average lifetime was estimated to be over 30,000 hours at case temperature of 65 degree C under 3A. In green LDs, 1 watt class 532 nm green LDs as same wavelength as second harmonic generation (SHG) green laser was developed and the wall plug efficiency was 12.1 %. And the longer lasing wavelength was achieved to 537 nm.
The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the low dislocation freestanding
GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating whose
period was 80 nm was formed into an n-type cladding layer. The fine tooth shape grating was obtained by the EB
lithography and the dry etching. No additional threading dislocation could be found at the regrowth interface. As a result,
we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The
threshold current and the slope efficiency were 22 mA and 1.44 W/A under continuous wave operation at 25 °C,
respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental
transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 °C to 85 °C at
an output power of 30 mW. The lifetime was estimated to be 4000 h by the lifetime test which was carried out under the
condition of a constant output power of 30mW at 25 °C for 1000 h. The single longitudinal mode emission was
maintained for the life tested DFB laser diodes.
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