Dr. Steven F. LeBoeuf Profile

Dr. Steven F. LeBoeuf

President and COO at Valencell Inc

SPIE Involvement:

Author

Publications (6)

SPIE Journal Paper | 1 July 2007

Strong broadband optical absorption in silicon nanowire films

Loucas Tsakalakos, Joleyn Balch, Jody Fronheiser, Min-Yi Shih, Stephen LeBoeuf, Matthew Pietrzykowski, Peter Codella, Bas Korevaar, Oleg Sulima, James Rand, Anilkumar Davuluru, Umakant Rapol

JNP, Vol. 1, Issue 01, 013552, (July 2007) https://doi.org/10.1117/12.10.1117/1.2768999

KEYWORDS: Silicon, Absorption, Silicon films, Reflectivity, Solids, Glasses, Thin films, Chemical vapor deposition, Optical properties, Nanowires

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Proceedings Article | 14 September 2005 Paper

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

J. Grandusky, M. Jamil, V. Jindal, J. DeLuca, S. LeBoeuf, X. Cao, S. Arthur, F. Shahedipour-Sandvik

Proceedings Volume 5941, 59410W (2005) https://doi.org/10.1117/12.617658

KEYWORDS: Light emitting diodes, Electroluminescence, Magnesium, Gallium, Doping, Gallium nitride, Diffractive optical elements, Metalorganic chemical vapor deposition, Silicon, Indium gallium nitride

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Proceedings Article | 20 October 2004 Paper

Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN

X. Cao, Stephen LeBoeuf, Stephen Arthur, Danielle Merfeld, Mark D'Evelyn

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.566040

KEYWORDS: Light emitting diodes, Gallium nitride, Sapphire, Near ultraviolet, Blue light emitting diodes, Ultraviolet light emitting diodes, Internal quantum efficiency, Ultraviolet radiation, Electroluminescence, Indium gallium nitride

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Proceedings Article | 26 January 2004 Paper

Simplified electro-optical model for device and circuit simulations of light-emitting diodes (LEDs)

Abasifreke Ebong, Evan Downey, Stephen Arthur, Xiana Cao, Stephen LeBoeuf, Danielle Merfeld

Proceedings Volume 5187, (2004) https://doi.org/10.1117/12.511885

KEYWORDS: Light emitting diodes, Electro optical modeling, Electro optics, Instrument modeling, Device simulation, Metals, Data modeling, Resistors, Light sources and illumination, Photoresistors

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Proceedings Article | 26 November 2002 Paper

Modeling and circuit simulation of GaN-based light-emitting diodes for optimum efficiency through uniform current spreading

Abasifreke Ebong, S. Arthur, Arthur Downey, Edward Stokes, Xian-an Cao, Stephen LeBoeuf, Peter Sandvik, D. Walker

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.452586

KEYWORDS: Resistance, Light emitting diodes, Device simulation, Metals, Diodes, Resistors, Instrument modeling, Circuit switching, Gallium nitride, Reflectivity

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Proceedings Article | 26 November 2002 Paper

Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

Xian-an Cao, K. Topol, F. Shahedipour-Sandvik, J. Teetsov, Peter Sandvik, Stephen LeBoeuf, Abasifreke Ebong, James Kretchmer, Edward Stokes, S. Arthur, Alain Kaloyeros, D. Walker

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.452581

KEYWORDS: Light emitting diodes, Temperature metrology, Gallium nitride, Indium gallium nitride, Quantum wells, Transmission electron microscopy, Electroluminescence, Sapphire, Gallium, Diffusion

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Showing 5 of 6 publications

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