High transmission attenuated phase shift masks (Hi-T PSM) have been successfully applied in volume manufacturing
for certain memory devices. Moreover, numerous studies have shown the potential benefits of Hi-T PSM for specific
lithography applications. In this paper, the potential for extending Hi-T PSM to logic devices, is revisited with an
emphasis on understanding layout, transmission, and manufacturing of Hi-T PSM versus traditional 6% embedded
attenuated phase shift mask (EAPSM). Simulations on various layouts show Hi-T PSM has advantage over EAPSM in
low duty cycle line patterns and high duty cycle space patterns. The overall process window can be enhanced when Hi-
T PSM is combined with optimized optical proximity correction (OPC), sub-resolution assist features (SRAF), and
source illumination. Therefore, Hi-T PSM may be a viable and lower cost alternative to other complex resolution
enhancement technology (RET) approaches. Aerial image measurement system (AIMS) results on test masks, based on
an inverse lithography technology (ILT) generated layout, confirm the simulation results. New advancement in high
transmission blanks also make low topography Hi-T PSM a reality, which can minimize scattering effects in high NA
lithography.
The authors are reporting on the comparison of various industry methods of managing, controlling and limiting haze
growth on 193nm reticles. This comparison includes reporting on the results from the Reticle Haze Treatment (RigHT)
process developed at Micron / Photronics Mask Technology Center and transferred to Photronics, Inc. This process
provides 193nm PSM reticles that have shown no haze growth after excessive wafer exposures and are usable for the life
of the reticle.
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