The extreme ultraviolet (EUV) light source has been developed together with the lithography EUV scanner. As tool with a 10 W EUV light source, ASML shipped the “a-demo tool” in 20071) and Nikon shipped EUV-1 in 20082). Then ASML developed the b-tool, NXE-3100, at the beginning of 2011 with a 100 W EUV light source.3)4) Requirement of the EUV exposure tool is now covered by the g-tool; NXE3300 (for high volume manufacturing (HVM))5). The required EUV power is 250 W clean power (after purifying infrared (IR) and deep ultra violet (DUV) spectra) at intermediate focus (IF). However, the demonstrated power level was around 80 W6)7) in 2013.
We report the status of CO2-Sn-LPP (Laser-produced-plasma) EUV light source that is being developed at Gigaphoton. Our unique and original technologies are; the combination of a pulsed CO2 laser with Sn droplets, dual wavelength laser application and Sn mitigation with a magnetic field. With these technologies, we achieved >250W (clean burst power at I/F) during more than 10 Billion pulses of operation.
At the conference, we will present the development progress of system key components of our EUV light source and the evaluation results of the rate of decrease in reflectivity of actual collector mirrors at >250W.
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration and a magnetic field debris mitigation system. To achieve 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 26 kW CO2 laser output power by upgrading the CO2 laser beam transfer system, the conversion efficiency (CE) by the optimization of plasma-related parameters to now 6 %, the dose stability and suppression of small Tin (Sn) debris by upgrading the shooting control system, the collector mirror degradation rate by the optimization of H2 flow condition and changes in the EUV chamber structure. This paper presents the key technology update of our EUV light source.
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Original technologies and key components of this source include a high-power carbon dioxide (CO2) laser with 15 ns pulse duration, a short wavelength solid-state pre-pulse laser with 10 ps pulse duration, a highly stabilized small droplet (DL) target, a precise DL-laser shooting control system and unique debris mitigation technology with a magnetic field. In this paper, an update of the development progress of the total system and of the key components is presented.
Gigaphoton Inc. is developing a CO2-Sn-LPP EUV light source based on unique and original technologies including a high power CO2laser with 15 nanosecond pulse duration, a solid-state pre-pulse laser with 10 picosecond pulse duration, a highly stabilized droplet generator, a precise laser-droplet shooting control system and a debris mitigation system using a magnetic field. In this paper, an update of the development progress of our 250W CO2-Sn-LPP EUV light source and of the key components is presented.
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