Dr. Thomas Hingst Profile

Dr. Thomas Hingst

Senior Staff Engineer at Qimonda Dresden GmbH & Co OHG

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Publications (6)

Proceedings Article | 3 October 2008 Paper

Model-free and model-based methods for dimensional metrology during the lifetime of a product

Peter Weidner, Alexander Kasic, Thomas Hingst, Carsten Ehlers, Sylke Philipp, Thomas Marschner, Manfred Moert

Proceedings Volume 7155, 71550Y (2008) https://doi.org/10.1117/12.814534

KEYWORDS: Semiconducting wafers, Scatterometry, Model-based design, Dimensional metrology, Atomic force microscopy, Infrared radiation, Metrology, Critical dimension metrology, Thermal modeling, High volume manufacturing

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Proceedings Article | 16 April 2008 Paper

Impact of sampling on uncertainty: semiconductor dimensional metrology applications

Benjamin Bunday, Bart Rijpers, Bill Banke, Chas Archie, Ingrid Peterson, Vladimir Ukraintsev, Thomas Hingst, Masafumi Asano

Proceedings Volume 6922, 69220X (2008) https://doi.org/10.1117/12.772993

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Metrology, Process control, Statistical analysis, Calibration, Scatterometry, Multiphoton fluorescence microscopy, Scanning electron microscopy, Etching

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Proceedings Article | 18 June 2007 Paper

Scatterometry from crossed grating structures in different configurations

Thomas Schuster, Stephan Rafler, Wolfgang Osten, Peter Reinig, Thomas Hingst

Proceedings Volume 6617, 661715 (2007) https://doi.org/10.1117/12.726229

KEYWORDS: Scatterometry, Picosecond phenomena, Polarization, Scanning electron microscopy, Diffraction, Jones vectors, Etching, Ellipsometry, Spectroscopic ellipsometry, Systems modeling

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Proceedings Article | 10 May 2005 Paper

Metrology of deep trench etched memory structures using 3D scatterometry

Peter Reinig, Rene Dost, Manfred Moert, Thomas Hingst, Ulrich Mantz, Jasen Moffitt, Sushil Shakya, Christopher Raymond, Mike Littau

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599342

KEYWORDS: Scatterometry, Semiconducting wafers, Scanning electron microscopy, 3D modeling, 3D metrology, Metrology, Process control, 3D applications, Scattering, Scatter measurement

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Proceedings Article | 24 May 2004 Paper

Spectroscopic ellipsometry-based scatterometry for depth and linewidth measurements of polysilicon-filled deep trenches

Thomas Hingst, Manfred Moert, Peter Reinig, Elke Backen, Rene Dost, Peter Weidner, John Hopkins, Ted Dziura, Assim Elazami, Regina Freed

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535646

KEYWORDS: Scatterometry, Oxides, Atomic force microscopy, Semiconducting wafers, 3D metrology, Silicon, Process control, Scatter measurement, 3D modeling, Etching

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Proceedings Article | 2 June 2003 Paper

Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485011

KEYWORDS: Scatterometry, Semiconducting wafers, Single crystal X-ray diffraction, Photomasks, Critical dimension metrology, Process control, Scatter measurement, Scanning electron microscopy, Finite element methods, Spectroscopic ellipsometry

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Showing 5 of 6 publications

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