Free space coupled, InGaAs PIN + TIA Quad Photoreceivers enable multiple space applications that require differential wavefront sensing, such as gravitational wave detectors, and position sensing and tracking, for example inter-satellite optical communication links. Optical crosstalk between the individual quadrants of the 2 × 2 photoreceiver array is a key parameter that limits the position and/or direction sensing error of the system. Therefore, it is imperative to ensure low crosstalk in the quad photoreceivers throughout the mission life. We present 1 mm, 1.5 mm, and 2 mm diameter low noise Quad Photoreceivers that demonstrate crosstalk < -30 dB up to 20 MHz frequency. These devices were subjected to 100 MeV Protons and 100 MeV/n Helium Ions up to a fluence of 1 × 1010 cm-2. These tests not only validate the devices for Geostationary Orbit missions, but also for deep space missions outside of Earth’s protective magnetosphere where Galactic Cosmic Rays are a significant component of the radiation environment. All devices were found to be fully functional after radiation, and their crosstalk was essentially unchanged in all cases. Pre- and Post- radiation results were also measured for Dark Current vs. Reverse Bias Voltage for the Quad Photodiodes, DC Responsivity of the Quad Photodiodes, Conversion Gain and Bandwidth of the PIN + TIA Quad Photoreceiver, TIA Drive Current, and Input Equivalent Noise Density of PIN + TIA. Although we observed an increase in dark current due to radiation induced displacement damage in the Quad Photodiode, we did not observe any change in any other parameter for Quad Photoreceivers.
We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250, and 290 Micron, coupled with a Single Mode Fiber using 100 MeV/n Carbon (C) Ions up to a cumulative dose of ~40 krad. During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100 MeV/n Carbon Ions with a fluence of 106, 107, 108, 109, and 1010 ions/cm2 at each fluence level. At 100 MeV/n the Linear Energy Transfer (LET) of Carbon Ion is ~0.156 MeV-cm2/mg in Extended InGaAs, which is an order magnitude more than Proton (H) and Helium (He) Ions of 100 MeV/n energy. Thus, significant displacement damage is anticipated in the Extended InGaAs Photodiode with 100 MeV/n Carbon Ions with a total fluence of 1 × 1010 ions/cm2 . Pre- and Post- radiation results were also measured for: (1) Leakage Current Vs. Voltage for the Extended InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. The leakage current increased up to a factor of ~2X at lower bias of 100 mV at the highest fluence of 1010 ions/cm2, but not significantly at higher bias of 2 V. We did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.
We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250 and 290 Micron, coupled with a Single Mode Fiber using Hydrogen (H), Helium (He), and Iron (Fe) Ions which collectively make up over 90% of the Galactic Cosmic Rays (GCR). During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100, 250, 500 and 1000 MeV/n Hydrogen, Helium, and Iron Ions with a fluence of 106, 107 and 108 ions/cm2 at each energy level. Pre- and Post-radiation results were also measured for: (1) Leakage Current Vs. Voltage for the InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. We did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.
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