Introduction of EUV has greatly simplified patterning but patterning complexity and costs continue to increase every node. Contributing to the complexity and costs are some of the limitations of EUV such as stochastic defects, resolution, line-edge roughness, sensitivity (RLS) tradeoff, counter scaling of tip to tip as half pitch decreases, poor etch selectivity, edge placement errors (EPE) with EUV multi-patterning as well as challenges in EUV Mask fabrication such as Mask 3D effects for 2nm and below nodes. This talk will outline how innovation in materials engineering combined with new process technologies is being used to address these limitations to extend EUV and greatly help in reducing costs. Novel films and underlayers and their co optimization with both CAR and metal oxide photoresists, new advances in plasma etch, breakthrough pattern shaping capability which can elongate pre-defined line/space patterns, selective technologies for fully self-aligned solutions, advances in metrology for EPE measurement and EUV defect detection as well as progress in mask writing, mask etch, and mask cleans for EUV mask materials will be presented.
Transistor scaling has transitioned from wavelength scaling to multi-patterning techniques, due to the resolution limits of immersion of immersion lithography. Deposition and etch have enabled scaling in the by means of SADP and SAQP. Spacer based patterning enables extremely small linewidths, sufficient for several future generations of transistors. However, aligning layers in Z-direction, as well as aligning cut and via patterning layers, is becoming a road-block due to global and local feature variation and fidelity. This presentation will highlight the impact of deposition and etch on this feature alignment (EPE) and illustrate potential paths toward lowering EPE using material engineering.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.